scholarly journals Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

2003 ◽  
Vol 94 (9) ◽  
pp. 5720-5725 ◽  
Author(s):  
W.-C. Yang ◽  
B. J. Rodriguez ◽  
M. Park ◽  
R. J. Nemanich ◽  
O. Ambacher ◽  
...  
Keyword(s):  
Microscopy Observation ◽  
Photoelectron Emission ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Emission Microscopy ◽  
Inversion Domain Boundaries ◽  
Photoelectron Emission Microscopy

scholarly journals Inversion domain boundaries in wurtzite GaN

2021 ◽  
Vol 103 (16) ◽  
Author(s):  
M. M. F. Umar ◽  
Jorge O. Sofo
Keyword(s):  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

Junction lines of inversion domain boundaries with stacking faults in GaN

2004 ◽  
Vol 70 (11) ◽  
Author(s):  
J. Kioseoglou ◽  
G. P. Dimitrakopulos ◽  
Ph. Komninou ◽  
H. M. Polatoglou ◽  
A. Serra ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries
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