Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth

2003 ◽  
Vol 83 (14) ◽  
pp. 2823-2825 ◽  
Author(s):  
Lin Shao ◽  
Phillip E. Thompson ◽  
Joe Bennett ◽  
Bhanu P. Dharmaiahgari ◽  
Len Trombetta ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Point Defect ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Defect Engineering ◽  
Ultrashallow Junctions

Model for molecular‐beam‐epitaxy growth over nonplanar surfaces

1988 ◽  
Vol 64 (7) ◽  
pp. 3522-3527 ◽  
Author(s):  
Mitsuru Ohtsuka ◽  
Seiichi Miyazawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

Molecular beam epitaxy growth of GaAsBi using As2 and As4

2014 ◽  
Vol 390 ◽  
pp. 120-124 ◽  
Author(s):  
Robert D. Richards ◽  
Faebian Bastiman ◽  
Christopher J. Hunter ◽  
Danuta F. Mendes ◽  
Abdul R. Mohmad ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth
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