Determination of carrier density in Te-doped Bi nanowires

2003 ◽  
Vol 83 (17) ◽  
pp. 3567-3569 ◽  
Author(s):  
Yu-Ming Lin ◽  
M. S. Dresselhaus
Keyword(s):  
Carrier Density

scholarly journals Determination of Carrier Density and Dynamics via Magnetoelectroluminescence Spectroscopy in Resonant-Tunneling Diodes

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
E.R. Cardozo de Oliveira ◽  
A. Naranjo ◽  
A. Pfenning ◽  
V. Lopez-Richard ◽  
G.E. Marques ◽  
...  
Keyword(s):  
Carrier Density ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

scholarly journals Impact of non-uniform carrier density on the determination of metal induced recombination losses

2019 ◽  
Author(s):  
David Herrmann ◽  
Andreas Fell ◽  
Hannes Höffler ◽  
Sabrina Lohmüller ◽  
Andreas Wolf
Keyword(s):  
Carrier Density

Study on Organic Triplet Exciton Emission and Quenching Processes by Low-temperature Photo- and Electroluminescence Spectroscopy

2008 ◽  
Vol 1115 ◽  
Author(s):  
Nils Asmus Kristian Kaufmann ◽  
Frank Jessen ◽  
M. Heuken ◽  
Herbert Boerner ◽  
Holger Kalisch ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Carrier ◽  
Carrier Density ◽  
Organic Materials ◽  
Energy Levels ◽  
Triplet Exciton ◽  
Light Sources ◽  
Charge Carrier Density ◽  
Electrical Excitation

AbstractOrganic light emitting diodes (OLED) are efficient light sources based on organic semiconductors. Unlike inorganic LEDs which are more or less point sources, OLED are planar light sources with up to 1 m2 in area. By using organic materials, they are cheap to produce and economical to use. The determination of triplet exciton energy levels is of interest for the development of efficient OLED, based on the fact that electrical excitation usually creates three times as many triplets as singlets. Additionally, the knowledge of these energy levels is crucial for the design and choice of emitter matrix materials and exciton blocking layers. These values are normally determined by photoluminescence (PL) measurements in solution for materials which show intersystem crossing (ISC) between singlet and triplet states. For some materials, the triplet levels cannot be measured this way because some materials prohibit ISC. In this work, a method is presented which allows the determination of the energy levels using low-temperature electroluminescence (EL) spectroscopy. The dependence on ISC is avoided by creating triplets directly with electrical excitation and this allows to measure a large class of organic materials. A low-temperature EL spectrum is presented for N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (TPD) in a 3-phenyl-4-(1‘-naphthyl)-5-phenyl-1,2,4-triazole (TAZ) matrix (TPD/TAZ 1:3) at 77 K. Triplet emission is only observed at very low charge carrier density (0.5 μA/mm2). Quenching processes are analyzed using combined EL and PL measurements and unipolar devices. Two factors can be the cause of the quenching: A strong quenching based on a low concentration of electrically activated impurities could explain the dependency. The other explanation points to a quenching based on electrons in the emitting layer. This might be explained with triplet-polaron quenching (TPQ). TPQ is proportional to the charge carrier density and contributes the dominant part to the quenching at low current densities.

Accurate and Simultaneous Determination of Carrier Density and Mobility in Organic Semi-conducting Materials

2009 ◽  
Vol 1154 ◽  
Author(s):  
Kai Shum ◽  
Zhuo Chen ◽  
Chenming Xue ◽  
Shi Jin
Keyword(s):  
Carrier Density ◽  
Field Effect Transistors ◽  
Semiconducting Materials ◽  
Light Emitting ◽  
Conducting Materials ◽  
Data Analysis Procedure ◽  
Organic Semiconducting Materials ◽  
Electronic Characteristic ◽  
Space Charge Limited Currents

AbstractHow to accurately determine carrier mobility and density in organic semiconducting materials is a very important subject for their optoelectronic applications including light-emitting diodes, solar cells, and thin film field-effect transistors. In this work, we report on a unique data analysis procedure for space-charge limited currents to simultaneously obtain the carrier density and mobility in semiconducting organic-materials. This procedure has been used for a few newly synthesized perylene tetracarboxylic diimide (PDI) derivatives with tunable π-stack structures without altering the electronic characteristic of individual molecules. How π-stack structural variation and residual carrier density affect electron transport performance will be discussed.

Method for noncontact measurement of 2DEG mobility and carrier density in AlGaN/GaN on semi-insulating wafers

2021 ◽  
Author(s):  
Marshall Wilson ◽  
Dmitriy Marinskiy ◽  
Jacek Lagowski ◽  
Carlos Almeida ◽  
Alexandre Savtchouk ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Carrier Density ◽  
Wafer Level ◽  
Zero Bias ◽  
Full Depletion ◽  
A Charge ◽  
Charge Deposition ◽  
Method Analysis ◽  
Bias Condition

Abstract We present a charge-assisted sheet resistance technique for noncontact wafer level determination of 2DEG mobility vs. sheet carrier density without any test structures or gates. Instead, the electrical biasing of 2DEG is provided by surface charge deposition, using a corona charging method. Analysis of the sheet resistance vs. deposited charge identifies the 2DEG full depletion condition and enables calculation of the 2DEG sheet carrier density required for the mobility. Results for AlGaN/GaN heterostructures on semi-insulating SiC and sapphire substrates show good agreement with Hall results at a zero-bias condition.

Non-destructive determination of free carrier density of epitaxial layers of GaSb by IR reflectivity measurement

1987 ◽  
Vol 155 (1) ◽  
pp. 125-132 ◽  
Author(s):  
S. Schirar ◽  
L. Bayo ◽  
A. Melouah ◽  
J. Bougnot ◽  
C. Llinares ◽  
...  
Keyword(s):  
Carrier Density ◽  
Free Carrier ◽  
Epitaxial Layers ◽  
Reflectivity Measurement ◽  
Free Carrier Density ◽  
Non Destructive
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