Determination of carrier density ratio and recombination coefficient of a junction transistor

1966 ◽  
Vol 4 (3) ◽  
pp. 58-61
Author(s):  
G.R. Mohan Rao ◽  
B. Ramachandra Rao
Keyword(s):  
Carrier Density ◽  
Density Ratio ◽  
Recombination Coefficient ◽  
Junction Transistor

scholarly journals Determination of Carrier Density and Dynamics via Magnetoelectroluminescence Spectroscopy in Resonant-Tunneling Diodes

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
E.R. Cardozo de Oliveira ◽  
A. Naranjo ◽  
A. Pfenning ◽  
V. Lopez-Richard ◽  
G.E. Marques ◽  
...  
Keyword(s):  
Carrier Density ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Film Cooling of the Gas Turbine Endwall by Discrete-Hole Injection

1996 ◽  
Vol 118 (2) ◽  
pp. 278-284 ◽  
Author(s):  
M. Y. Jabbari ◽  
K. C. Marston ◽  
E. R. G. Eckert ◽  
R. J. Goldstein
Keyword(s):  
Film Cooling ◽  
Density Ratio ◽  
Reynolds Numbers ◽  
Hole Injection ◽  
Qualitative Information ◽  
Cooling Effectiveness ◽  
Cooling Performance ◽  
Film Cooling Effectiveness ◽  
Density Ratios

Film cooling performance for injection through discrete holes in the endwall of a turbine blade is investigated. The effectiveness is measured at 60 locations in the region covered by injection. Three nominal blowing rates, two density ratios, and two approaching flow Reynolds numbers are examined. Analysis of the data reveals that even 60 locations are insufficient for the determination of the field of film cooling effectiveness with its strong local variations. Visualization of the traces of the coolant jets on the endwall surface, using ammonium-diazo-paper, provides useful qualitative information for the interpretation of the measurements, revealing the paths and interaction of the jets, which change with blowing rate and density ratio.

scholarly journals Impact of non-uniform carrier density on the determination of metal induced recombination losses

2019 ◽  
Author(s):  
David Herrmann ◽  
Andreas Fell ◽  
Hannes Höffler ◽  
Sabrina Lohmüller ◽  
Andreas Wolf
Keyword(s):  
Carrier Density

Film Cooling of the Gas Turbine Endwall by Discrete-Hole Injection

1994 ◽  
Author(s):  
M. Y. Jabbari ◽  
K. C. Marston ◽  
E. R. G. Eckert ◽  
R. J. Goldstein
Keyword(s):  
Film Cooling ◽  
Density Ratio ◽  
Reynolds Numbers ◽  
Hole Injection ◽  
Qualitative Information ◽  
Cooling Effectiveness ◽  
Cooling Performance ◽  
Film Cooling Effectiveness ◽  
Density Ratios

Film cooling performance for injection through discrete holes in the endwall of a turbine blade is investigated. The effectiveness is measured at sixty locations in the region covered by injection. Three nominal blowing rates, two density ratios, and two approaching flow Reynolds numbers are examined. Analysis of the data reveals that even sixty locations are insufficient for the determination of the field of film cooling effectiveness with its strong local variations. Visualization of the traces of the coolant jets on the endwall surface, using ammonium-diazo-paper, provides useful qualitative information for the interpretation of the measurements, revealing the paths and interaction of the jets which change with blowing rate and density ratio.

Elektrische Leitfähigkeitsmessungen und Bestimmung des G(freie Ionen)-Wertes bei röntgenbestrahlten Flüssigkeiten verschiedener Molekularstruktur

1968 ◽  
Vol 23 (2) ◽  
pp. 126-133 ◽  
Author(s):  
Werner F. Schmidt
Keyword(s):  
Electrical Conductivity ◽  
Room Temperature ◽  
Absorbed Dose ◽  
Recombination Coefficient ◽  
Conductivity Measurements ◽  
Absorbed Dose Rate ◽  
X Ray ◽  
Free Ions ◽  
Radiation Induced

Electrical conductivity measurements were made for the determination of G (free ions) in some hydrocarbons. The radiation source was a x-ray tube operated at 55 kV. Four quantities were measured for each liquid: 1. the stationary electrical conductivity at low electric field strength during irradiation, 2. the mobilities of the radiation-induced ions, 3. the volume recombination coefficient, and 4. the absorbed dose rate.All measurements were performed with aerated liquids at room temperature. The following G-values were obtained: n-pentane 0,1; n-hexane and n-heptane 0,09; iso-octane 0,11; cyclohexane 0,06; benzene 0,07; decalin 0,04. The standard deviation was estimated to ± 25 per cent.

Study on Organic Triplet Exciton Emission and Quenching Processes by Low-temperature Photo- and Electroluminescence Spectroscopy

2008 ◽  
Vol 1115 ◽  
Author(s):  
Nils Asmus Kristian Kaufmann ◽  
Frank Jessen ◽  
M. Heuken ◽  
Herbert Boerner ◽  
Holger Kalisch ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Carrier ◽  
Carrier Density ◽  
Organic Materials ◽  
Energy Levels ◽  
Triplet Exciton ◽  
Light Sources ◽  
Charge Carrier Density ◽  
Electrical Excitation

AbstractOrganic light emitting diodes (OLED) are efficient light sources based on organic semiconductors. Unlike inorganic LEDs which are more or less point sources, OLED are planar light sources with up to 1 m2 in area. By using organic materials, they are cheap to produce and economical to use. The determination of triplet exciton energy levels is of interest for the development of efficient OLED, based on the fact that electrical excitation usually creates three times as many triplets as singlets. Additionally, the knowledge of these energy levels is crucial for the design and choice of emitter matrix materials and exciton blocking layers. These values are normally determined by photoluminescence (PL) measurements in solution for materials which show intersystem crossing (ISC) between singlet and triplet states. For some materials, the triplet levels cannot be measured this way because some materials prohibit ISC. In this work, a method is presented which allows the determination of the energy levels using low-temperature electroluminescence (EL) spectroscopy. The dependence on ISC is avoided by creating triplets directly with electrical excitation and this allows to measure a large class of organic materials. A low-temperature EL spectrum is presented for N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (TPD) in a 3-phenyl-4-(1‘-naphthyl)-5-phenyl-1,2,4-triazole (TAZ) matrix (TPD/TAZ 1:3) at 77 K. Triplet emission is only observed at very low charge carrier density (0.5 μA/mm2). Quenching processes are analyzed using combined EL and PL measurements and unipolar devices. Two factors can be the cause of the quenching: A strong quenching based on a low concentration of electrically activated impurities could explain the dependency. The other explanation points to a quenching based on electrons in the emitting layer. This might be explained with triplet-polaron quenching (TPQ). TPQ is proportional to the charge carrier density and contributes the dominant part to the quenching at low current densities.

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