Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy

2003 ◽  
Vol 83 (9) ◽  
pp. 1764-1766 ◽  
Author(s):  
B. Rezek ◽  
T. Mates ◽  
J. Stuchlı́k ◽  
J. Kočka ◽  
A. Stemmer
Keyword(s):  
Atomic Force Microscopy ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Charge Storage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Hydrogenated Amorphous

Microscopic Electrical Conductivity of Nanodiamonds after Thermal and Plasma Treatments

MRS Advances ◽  
2016 ◽  
Vol 1 (16) ◽  
pp. 1105-1111 ◽  
Author(s):  
Jan Čermák ◽  
Halyna Kozak ◽  
Štěpán Stehlík ◽  
Vladimír Švrček ◽  
Vincent Pichot ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Atomic Force Microscopy ◽  
Electric Current ◽  
Amorphous Carbon ◽  
Rf Plasma ◽  
Electrically Conductive ◽  
Force Microscopy ◽  
Atomic Force ◽  
Plasma Treatments ◽  
Hydrogenated Amorphous

ABSTRACTAtomic force microscopy (AFM) is used to measure local electrical conductivity of HPHT nanodiamonds (NDs) dispersed on Au substrate in the as-received state and after thermal or plasma treatments. Oxygen-treated NDs are highly electrically resistive, whereas on hydrogen-treated NDs electric current around -200 pA at -2 V is detected. The as-received NDs as well as NDs after an underwater radio-frequency (RF) plasma or laser irradiation (LI) treatments contain both electrically conductive (two types: highly and weakly conductive) and highly resistive particles. The higher conductivity is attributed to H-terminated (RF) or graphitized (LI) NDs. The lower conductivity is attributed to NDs with hydrogenated amorphous carbon shell.

Structural Investigations of Laser-Crystallized Hydrogenated Amorphous Silicon

1998 ◽  
Vol 508 ◽  
Author(s):  
D. Toet ◽  
P.M. Smith ◽  
T.W. Sigmon ◽  
R. Qiu ◽  
T. Takehara ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Process Conditions ◽  
Laser Crystallization ◽  
Structural Investigations ◽  
Short Pulses ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Hydrogenated Amorphous

AbstractWe investigated the structure of hydrogenated amorphous silicon, thin films crystallized by short pulses from a XeCl excimer laser at fluences for which total melting of the films occurs. Atomic force microscopy revealed that films prepared using optimized process conditions, leading to hydrogen contents ≤ 5 at.%, are smoother after laser crystallization than those prepared by laser-dehydrogenation. The roughness of the laser-crystallized films increases with their thickness, and can be reduced by multiple exposure. A better smoothing is obtained by partially remelting the films after the first irradiation. Transmission electron microscopy shows that the grains in the laser-crystallized films have sizes that are comparable to the film thickness.

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