scholarly journals Resonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage

2003 ◽  
Vol 83 (7) ◽  
pp. 1456-1458 ◽  
Author(s):  
Hiroya Ikeda ◽  
Masanori Iwasaki ◽  
Yasuhiko Ishikawa ◽  
Michiharu Tabe
Keyword(s):  
Applied Voltage ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Wide Range

scholarly journals Transverse Patterns in the Bistable Resonant Tunneling Systems Under Ballistic Lateral Transport

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 481-487
Author(s):  
V. A. Kochelap ◽  
B. A. Glavin ◽  
V. V. Mitin
Keyword(s):  
Numerical Simulations ◽  
Theoretical Investigation ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Small Region ◽  
Variational Procedure ◽  
Lateral Transport ◽  
Double Barrier ◽  
Wide Range ◽  
Bistability Region

We report the theoretical investigation of the phenomenon of the formation of patterns transverse to the tunneling current in resonant tunneling double-barrier heterostructures in the case of wide range of bistable voltages. In contrast to the case of the patterns in the structures with small region of bistability, for pronounced bistability electron lateral transport is strongly nonlocal. We performed numerical simulations of the stationary and mobile patterns using special variational procedure. Our results revealed that though the possible types of patterns remains the same as for the structures with small bistability region, their characteristics are modified considerably.

PARAMETRIC MODEL OF RESISTANCE OF PLASMA-EROSIVE LOAD, ADEQUATE IN THE WIDE RANGE OF CHANGE OF APPLIED VOLTAGE

2017 ◽  
Vol 2017 (3) ◽  
pp. 3-12 ◽  
Author(s):  
N.A. Shydlovska ◽  
◽  
S.M. Zakharchenko ◽  
O.P. Cherkaskyi ◽  
◽  
...  
Keyword(s):  
Applied Voltage ◽  
Parametric Model ◽  
Wide Range

The Influence of Barrier and Applied Voltage Parameters on the Impulse Surface Discharge Characteristics

2020 ◽  
Vol 11 (11) ◽  
pp. 17-27
Author(s):  
Vadim V. VOEVODIN ◽  
◽  
Marina V. SOKOLOVA ◽  
Viktor R. SOLOV’YEV ◽  
Nikolay Yu. LYSOV ◽  
...  
Keyword(s):  
Applied Voltage ◽  
Voltage Pulse ◽  
Discharge Zone ◽  
Surface Discharge ◽  
Initial Surface ◽  
Barrier Material ◽  
Dielectric Barrier ◽  
Discharge Ignition ◽  
Study Results ◽  
Wide Range

The results from an experimental study of impulse surface discharge occurring in an electrode system containing a dielectric plate are presented. On one of its sides, the plate had a corona-producing electrode made of 50 mm thick copper foil grounded through a current shunt for measuring the discharge current. On its other side, the plate had a high-voltage electrode, to which the voltage from a pulse generator was applied. The article presents the results from measurements of the initial voltage and the sizes of the surface discharge area in air when applying single voltage pulses with different pulse front steepness in the range 0,1–3,4 kV/ms and amplitude in the range 7–15 kV. The measurements were carried out for different dielectric barrier materials with the e values from 2 to 35. The dielectric barrier thickness was 0,9–1,8 mm. The study results have shown that the initial surface discharge ignition voltage depends essentially on the voltage pulse parameters, whereas the barrier characteristics have a weaker effect on this voltage. It has been determined that the discharge has different discharge zone length and different structure depending on the dielectric barrier properties and applied voltage parameters. The streamer zone sizes decrease with increasing the barrier material e value at the same voltage pulse steepness and increase with increasing the steepness for each barrier material. The data obtained for a wide range of external conditions can be used in numerical modeling of discharge.

Simulation of GaAs/AlxGa1-xAs/InyGa1-y As Double-Barrier Resonant Tunneling Structures

2011 ◽  
Vol 399-401 ◽  
pp. 1093-1096
Author(s):  
Yuan Ming Zhou
Keyword(s):  
Transmission Coefficient ◽  
Current Density ◽  
Resonant Tunneling ◽  
Indium Content ◽  
Rapid Decrease ◽  
Supply Function ◽  
Double Barrier ◽  
Resonant Condition ◽  
Zero Bias ◽  
Double Barrier Resonant Tunneling

We study the resonant tunneling in symmetric GaAs/AlxGa1-xAs/InyGa1-yAs double-barrier resonant-tunneling structures. Effects of three factors on the resonant tunneling are simulated and discussed. On increasing the barrier height, the decrease of current density is attributed to the interplay between the increase of the supply function of available electrons and the rapid decrease of the transmission coefficient through the device area, and the lowest Indium content for realizing the zero-bias resonant tunneling increases. With the increase of the barrier (well) width, the decrease of the current density can be explained by the fact that both the supply function and the transmission coefficient decreases, and the lowest Indium content meeting the zero-bias resonant condition decreases.

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