Optical centers introduced in boron-doped synthetic diamond by near-threshold electron irradiation

2003 ◽  
Vol 94 (5) ◽  
pp. 3091-3100 ◽  
Author(s):  
S. J. Charles ◽  
J. W. Steeds ◽  
J. E. Butler ◽  
D. J. F. Evans
Keyword(s):  
Electron Irradiation ◽  
Synthetic Diamond ◽  
Boron Doped ◽  
Near Threshold

Annealing and lateral migration of defects in IIa diamond created by near-threshold electron irradiation

2017 ◽  
Vol 110 (15) ◽  
pp. 152101 ◽  
Author(s):  
Kaiyue Wang ◽  
John W. Steeds ◽  
Zhihong Li ◽  
Hongxing Wang
Keyword(s):  
Electron Irradiation ◽  
Lateral Migration ◽  
Near Threshold

Electrochemical behavior of new electrode material: Compact of boron-doped synthetic diamond

2016 ◽  
Vol 52 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Yu. V. Pleskov ◽  
M. D. Krotova ◽  
V. V. Elkin ◽  
E. A. Ekimov
Keyword(s):  
Electrode Material ◽  
Electrochemical Behavior ◽  
Synthetic Diamond ◽  
Boron Doped

Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond

1998 ◽  
Vol 7 (6) ◽  
pp. 879-883 ◽  
Author(s):  
E. Rohrer ◽  
C.E. Nebel ◽  
M. Stutzmann ◽  
A. Flöter ◽  
R. Zachai ◽  
...  
Keyword(s):  
Synthetic Diamond ◽  
Boron Doped

Effect of Doping with Nitrogen and Boron on Cathodoluminescence of CVD-Diamond

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Yokota ◽  
H. Kawarada ◽  
A. Hiraki
Keyword(s):  
Electron Irradiation ◽  
Nitrogen Doping ◽  
Boron Doping ◽  
Cvd Diamond ◽  
Luminescent Center ◽  
Zero Phonon Line ◽  
Phonon Line ◽  
Nitrogen Doped ◽  
Boron Doped ◽  
Luminescent Centers

ABSTRACTWe have investigated cathodoluminescence (CL) of nitrogen- and boron-doped CVD diamonds compared with type Ib and undoped CVD diamonds. The CL spectrum of nitrogen-doped CVD diamond shows some luminescent centers, which are not observed in undoped one. Especially 2.15 eV (575 nm) and 1.67 eV (GRl) centers are prominent. CVD diamond doped with both nitrogen and boron shows a similar CL spectrum to boron-doped CVD diamond at lower concentration of nitrogen, and shows a spectrum composed of the centers obtained by nitrogen-doping and by boron-doping at higher concentration of nitrogen. Highenergy electron irradiation to nitrogen-doped CVD diamond produces an intense luminescent center having a zero-phonon line at 3.19 eV, and the following annealing make the emission of 2.15 eV center much more intense.

Evidence for a hard gap and Wigner lattice in heavily boron-doped synthetic diamond

2005 ◽  
Vol 71 (4) ◽  
Author(s):  
Tomoko Sudou ◽  
Kazutoshi Ohashi ◽  
Toshimaro Sato ◽  
Eiji Ohta ◽  
Satoru Okayasu ◽  
...  
Keyword(s):  
Synthetic Diamond ◽  
Boron Doped ◽  
Wigner Lattice

UHV STM of Cesium on Oxygenated Epitaxial Diamond (100) Films

1998 ◽  
Vol 509 ◽  
Author(s):  
R.E. Stallcup ◽  
J.M. Perez
Keyword(s):  
Chemical Vapor Deposition ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Synthetic Diamond ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped ◽  
Theoretical Predictions

AbstractThe effects of Cs on oxygenated epitaxial diamond (100) films are studied using ultrahigh vacuum (UHV) scanning tunneling microscopy (STM). The epitaxial diamond (100) films are grown on synthetic diamond substrates using chemical vapor deposition and are boron doped. Before Cs deposition and oxygenation, UHV STM imaging of the epitaxial (100) films reveals a (2×l) dimer reconstruction. After Cs deposition and oxygenation, steps with relatively smooth surfaces are observed using positive tip voltages. Using negative tip voltages, many round bright structures approximately 20 Å in diameter are observed on the surface. We propose that these bright structures are Cs atoms or clusters of Cs atoms. Since these structures are only observed for negative tip voltages, they have a large number of empty states. Our observations are compared with recent theoretical predictions for Cs adsorbed on oxygenated diamond (100).

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