Determination of the diffusion length of charge carriers in nonstoichiometric sillenite-type crystals by the technique of nonsteady-state photocurrents

2003 ◽  
Vol 94 (4) ◽  
pp. 2507-2509 ◽  
Author(s):  
H. Vogt ◽  
E. Krätzig
1991 ◽  
Vol 219 ◽  
Author(s):  
M. Vieira ◽  
R. Martins ◽  
E. Fortunato ◽  
F. Soares ◽  
L. Guimaraes

ABSTRACTThe determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique, FST. This technique consists in the transient analysis of the photocurrent/photopotential induced by a laser beam that moves perpendicularly to the structure with a constant motion ratio, at different velocities. Taking into account the competition between the diffusion/drift velocities of the excess carriers and the velocity of the flying spot, it is possible to solve the transport equations and to compute separately L* and τ*, from the asymmetrical distribution responses.


1998 ◽  
Vol 17 (1) ◽  
pp. 35-42 ◽  
Author(s):  
Y Ramadin ◽  
M Ahmad ◽  
A Zihlif ◽  
R Al-Haddad ◽  
M Makadsi ◽  
...  

2018 ◽  
Vol 4 (6) ◽  
pp. eaat1670 ◽  
Author(s):  
Xinde Tao ◽  
Qi Liu ◽  
Bingfeng Miao ◽  
Rui Yu ◽  
Zheng Feng ◽  
...  

2019 ◽  
Vol 10 ◽  
pp. 2449-2458
Author(s):  
Zhihua Fu ◽  
Tatjana Ladnorg ◽  
Hartmut Gliemann ◽  
Alexander Welle ◽  
Asif Bashir ◽  
...  

We present a new approach to study charge transport within 2D layers of organic semi-conductors (OSCs) using atomic force microscopy (AFM)-based lithography applied to self-assembled monolayers (SAMs), fabricated from appropriate organothiols. The extent of lateral charge transport was investigated by insulating pre-defined patches within OSC-based SAMs with regions of insulating SAM made from large band gap alkanethiolates. The new method is demonstrated using a phenyl-linked anthracenethiolate (PAT), 4-(anthracene-2-ylethynyl)benzyl thiolate. I–V characteristics of differently shaped PAT-islands were measured using the AFM tip as a top electrode. We were able to determine a relationship between island size and electrical conductivity, and from this dependence, we could obtain information on the lateral charge transport and charge carrier mobility within the thin OSC layers. Our study demonstrates that AFM nanografting of appropriately functionalized OSC molecules provides a suitable method to determine intrinsic mobilities of charge carriers in OSC thin films. In particular, this method is rather insensitive with regard to influence of grain boundaries and other defects, which hamper the application of conventional methods for the determination of mobilities in macroscopic samples.


1971 ◽  
Vol 4 (1) ◽  
pp. 249-255 ◽  
Author(s):  
S. Rakshit ◽  
S. N. Biswas ◽  
A. N. Chakravarti

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