Enhanced electroluminescence in silicon-on-insulator metal–oxide–semiconductor transistors with thin silicon layer

Avi Karsenty; Amir Sa’ar; Nissim Ben-Yosef; Joseph Shappir

doi:10.1063/1.1587877

Enhanced electroluminescence in silicon-on-insulator metal–oxide–semiconductor transistors with thin silicon layer

Applied Physics Letters ◽

10.1063/1.1587877 ◽

2003 ◽

Vol 82 (26) ◽

pp. 4830-4832 ◽

Cited By ~ 16

Author(s):

Avi Karsenty ◽

Amir Sa’ar ◽

Nissim Ben-Yosef ◽

Joseph Shappir

Keyword(s):

Metal Oxide ◽

Silicon Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Silicon

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Transconductance oscillations in metal–oxide–semiconductor field-effect transistors with thin silicon-on-insulator originated by quantized energy levels

Applied Physics Letters ◽

10.1063/1.124724 ◽

1999 ◽

Vol 75 (10) ◽

pp. 1458-1460 ◽

Cited By ~ 5

Author(s):

Tetsuyasu Takahashi ◽

Mitiko Miura-Mattausch ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Energy Levels ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Silicon

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Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3360224 ◽

2010 ◽

Vol 96 (11) ◽

pp. 112102 ◽

Cited By ~ 7

Author(s):

J. Noborisaka ◽

K. Nishiguchi ◽

H. Kageshima ◽

Y. Ono ◽

A. Fujiwara

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Spectroscopy ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Silicon

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Observation of gate bias dependent interface coupling in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2767844 ◽

2007 ◽

Vol 102 (3) ◽

pp. 034509 ◽

Cited By ~ 2

Author(s):

YoungChai Jung ◽

KeunHwi Cho ◽

SungWoo Hwang ◽

David Ahn ◽

YunSeop Yu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Gate Bias ◽

Interface Coupling ◽

Thin Silicon

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Physics of Nanotransistors: a Gate Voltage and Surface Potential, Mobile Electron Charge in Massive Structure of the Metal-Oxide Semiconductor and in Extremely Thin Silicon on Insulator

Nanosistemi, Nanomateriali, Nanotehnologii ◽

10.15407/nnn.16.03.465 ◽

2018 ◽

Vol 16 (3) ◽

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Gate Voltage ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Electron Charge ◽

Massive Structure ◽

Mobile Electron ◽

Thin Silicon

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589739 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2836 ◽

Cited By ~ 5

Author(s):

T. Köster

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

Silicon Based

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A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

Journal of Applied Physics ◽

10.1063/1.4893582 ◽

2014 ◽

Vol 116 (7) ◽

pp. 074513 ◽

Cited By ~ 12

Author(s):

V. Mikhelashvili ◽

D. Cristea ◽

B. Meyler ◽

S. Yofis ◽

Y. Shneider ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Highly Sensitive ◽

Insulator Substrate

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Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Cited By ~ 2

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Effects of buried oxide on electrical performance of thin-film silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.369763 ◽

1999 ◽

Vol 85 (7) ◽

pp. 3912-3915 ◽

Cited By ~ 7

Author(s):

Jong-Wook Lee ◽

Min-Rok Oh ◽

Yo-Hwan Koh

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Electrical Performance ◽

Buried Oxide ◽

Effect Transistor

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