Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy

2003 ◽  
Vol 82 (25) ◽  
pp. 4465-4467 ◽  
Author(s):  
Ichitaro Waki ◽  
Chaiyasit Kumtornkittikul ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transition ◽  
Transition Wavelength

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

2015 ◽  
Vol 106 (22) ◽  
pp. 222102 ◽  
Author(s):  
Kanako Shojiki ◽  
Jung-Hun Choi ◽  
Takuya Iwabuchi ◽  
Noritaka Usami ◽  
Tomoyuki Tanikawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metastable Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phase Inclusion

InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport

2000 ◽  
Vol 77 (11) ◽  
pp. 1638-1640 ◽  
Author(s):  
G. Pozina ◽  
J. P. Bergman ◽  
B. Monemar ◽  
M. Iwaya ◽  
S. Nitta ◽  
...  
Keyword(s):  
Mass Transport ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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