Photovoltaic effect on differential capacitance profiles of low-energy-BF2+-implanted silicon wafers

2003 ◽  
Vol 82 (22) ◽  
pp. 3955-3957 ◽  
Author(s):  
M. N. Chang ◽  
C. Y. Chen ◽  
F. M. Pan ◽  
J. H. Lai ◽  
W. W. Wan ◽  
...  
Keyword(s):  
Photovoltaic Effect ◽  
Differential Capacitance ◽  
Silicon Wafers ◽  
Low Energy

Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma

1993 ◽  
Vol 32-33 ◽  
pp. 111-116 ◽  
Author(s):  
J. Ramm ◽  
E. Beck ◽  
Alex Dommann ◽  
Ignaz Eisele ◽  
D. Krüger ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Silicon Wafers ◽  
Low Energy ◽  
Dry Cleaning

Crystalline damage in silicon wafers and 'rare event' failure introduced by low-energy mechanical impact

2017 ◽  
Vol 63 ◽  
pp. 40-44 ◽  
Author(s):  
F. Atrash ◽  
I. Meshi ◽  
A. Krokhmal ◽  
P. Ryan ◽  
M. Wormington ◽  
...  
Keyword(s):  
Rare Event ◽  
Silicon Wafers ◽  
Low Energy ◽  
Mechanical Impact

Photovoltaic effect on the n-GaAs surface irradiated with low-energy Ar+ ions

2021 ◽  
Author(s):  
V. M. Mikoushkin ◽  
V. S. Kalinovskii ◽  
E. V. Kontrosh ◽  
K. K. Prudchenko
Keyword(s):  
Photovoltaic Effect ◽  
Low Energy ◽  
Gaas Surface

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

Dissociated Σ=27 boundaries in silicon

1988 ◽  
Vol 46 ◽  
pp. 624-625
Author(s):  
A. Garg ◽  
W.A.T. Clark ◽  
J.P. Hirth
Keyword(s):  
Electron Diffraction ◽  
Local Minimum ◽  
Boundary Energy ◽  
Coincidence Site Lattice ◽  
Boundary Plane ◽  
Low Energy ◽  
Theoretical Understanding ◽  
Site Lattice ◽  
Kikuchi Pattern ◽  
Analysis Techniques

In the last twenty years, a significant amount of work has been done in the theoretical understanding of grain boundaries. The various proposed grain boundary models suggest the existence of coincidence site lattice (CSL) boundaries at specific misorientations where a periodic structure representing a local minimum of energy exists between the two crystals. In general, the boundary energy depends not only upon the density of CSL sites but also upon the boundary plane, so that different facets of the same boundary have different energy. Here we describe TEM observations of the dissociation of a Σ=27 boundary in silicon in order to reduce its surface energy and attain a low energy configuration.The boundary was identified as near CSL Σ=27 {255} having a misorientation of (38.7±0.2)°/[011] by standard Kikuchi pattern, electron diffraction and trace analysis techniques. Although the boundary appeared planar, in the TEM it was found to be dissociated in some regions into a Σ=3 {111} and a Σ=9 {122} boundary, as shown in Fig. 1.

Transfer optics for high spatial resolution electron spectroscopy

1988 ◽  
Vol 46 ◽  
pp. 666-667
Author(s):  
G. G. Hembree ◽  
Luo Chuan Hong ◽  
P.A. Bennett ◽  
J.A. Venables
Keyword(s):  
Magnetic Field ◽  
Scanning Transmission Electron Microscope ◽  
Low Energy ◽  
Objective Lens ◽  
State University ◽  
Arizona State University ◽  
Initial Field ◽  
Resolution Electron ◽  
Scanning Transmission ◽  
Low Energy Electrons

A new field emission scanning transmission electron microscope has been constructed for the NSF HREM facility at Arizona State University. The microscope is to be used for studies of surfaces, and incorporates several surface-related features, including provision for analysis of secondary and Auger electrons; these electrons are collected through the objective lens from either side of the sample, using the parallelizing action of the magnetic field. This collimates all the low energy electrons, which spiral in the high magnetic field. Given an initial field Bi∼1T, and a final (parallelizing) field Bf∼0.01T, all electrons emerge into a cone of semi-angle θf≤6°. The main practical problem in the way of using this well collimated beam of low energy (0-2keV) electrons is that it is travelling along the path of the (100keV) probing electron beam. To collect and analyze them, they must be deflected off the beam path with minimal effect on the probe position.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Performance Evaluation of a Novel Type of Low-Energy Electron Microscope

1990 ◽  
Vol 48 (1) ◽  
pp. 354-355
Author(s):  
Bertholdand Senftinger ◽  
Helmut Liebl
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Field Strength ◽  
Numerical Aperture ◽  
Low Energy ◽  
Energy Electron ◽  
High Resolution Imaging ◽  
Lens System ◽  
Resolution Imaging ◽  
Low Energy Electron

During the last few years the investigation of clean and adsorbate-covered solid surfaces as well as thin-film growth and molecular dynamics have given rise to a constant demand for high-resolution imaging microscopy with reflected and diffracted low energy electrons as well as photo-electrons. A recent successful implementation of a UHV low-energy electron microscope by Bauer and Telieps encouraged us to construct such a low energy electron microscope (LEEM) for high-resolution imaging incorporating several novel design features, which is described more detailed elsewhere.The constraint of high field strength at the surface required to keep the aberrations caused by the accelerating field small and high UV photon intensity to get an improved signal-to-noise ratio for photoemission led to the design of a tetrode emission lens system capable of also focusing the UV light at the surface through an integrated Schwarzschild-type objective. Fig. 1 shows an axial section of the emission lens in the LEEM with sample (28) and part of the sample holder (29). The integrated mirror objective (50a, 50b) is used for visual in situ microscopic observation of the sample as well as for UV illumination. The electron optical components and the sample with accelerating field followed by an einzel lens form a tetrode system. In order to keep the field strength high, the sample is separated from the first element of the einzel lens by only 1.6 mm. With a numerical aperture of 0.5 for the Schwarzschild objective the orifice in the first element of the einzel lens has to be about 3.0 mm in diameter. Considering the much smaller distance to the sample one can expect intense distortions of the accelerating field in front of the sample. Because the achievable lateral resolution depends mainly on the quality of the first imaging step, careful investigation of the aberrations caused by the emission lens system had to be done in order to avoid sacrificing high lateral resolution for larger numerical aperture.

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