Electronic structure analysis of Zr silicate and Hf silicate films by using spatially resolved valence electron energy-loss spectroscopy

2003 ◽  
Vol 94 (1) ◽  
pp. 480-486 ◽  
Author(s):  
Nobuyuki Ikarashi ◽  
Kenzo Manabe
Keyword(s):  
Electronic Structure ◽  
Energy Loss ◽  
Electron Energy ◽  
Structure Analysis ◽  
Electron Energy Loss Spectroscopy ◽  
Valence Electron ◽  
Spatially Resolved ◽  
Electron Energy Loss

Local Electronic Structure Of Defects In Gan From Spatially Resolved Electron Energy-Loss Spectroscopy

1997 ◽  
Vol 482 ◽  
Author(s):  
M. K. H. Natusch ◽  
G. A. Botton ◽  
R. F. Broom ◽  
P. D. Brown ◽  
D. M. Tricker ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Crystal Defects ◽  
Vacuum Field ◽  
Spatially Resolved ◽  
Local Electronic Structure ◽  
Electron Energy Loss

AbstractThe optical properties and their modification by crystal defects of wurtzite GaN are investigated using spatially resolved electron energy-loss spectroscopy (EELS) in a dedicated ultra-high vacuum field emission gun scanning transmission electron microscope. The calculated density of states of the bulk crystal reproduces well the features of the measured spectra. The profound effect of a prismatic stacking fault on the local electronic structure is shown by the spatial variation of the optical properties derived from low-loss spectra. It is found that a defect state at the fault appears to bind 1.5 electrons per atom.

scholarly journals Effect of Al Addition on the Electronic Structure of Hafnia by Spatially Resolved Electron Energy Loss Spectroscopy

2006 ◽  
Vol 12 (S02) ◽  
pp. 1156-1157
Author(s):  
Q Li ◽  
J Dai ◽  
X Gong
Keyword(s):  
Electronic Structure ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Spatially Resolved ◽  
Al Addition ◽  
Electron Energy Loss

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Quantitative analysis of spatially resolved valence electron energy-loss spectra for electronic structure studies of grain boundaries and thin intergranular films

1995 ◽  
Vol 53 ◽  
pp. 314-315
Author(s):  
Roger H. French
Keyword(s):  
Electronic Structure ◽  
Quantitative Analysis ◽  
Spectral Line ◽  
Energy Loss ◽  
Grain Boundaries ◽  
Electron Energy ◽  
Valence Electron ◽  
Transition Strength ◽  
Spatially Resolved ◽  
Electron Energy Loss

The spatial variation of the electronic structure at interfaces is critical to both interatomic bonding at atomically abrupt interfaces such as grain boundaries and also to the development of van der Waals (vdW) attraction forces at partially wetted interfaces. This interfacial electronic structure, as represented by the interband transition strength , can be determined by Kramers Kronig (KK) analysis of either vacuum ultraviolet (VUV) optical reflectance spectra or spatially resolved valence electron energy loss (SR-VEEL) spectra. Quantitative analysis of SR-VEELS requires accurate spectral line shapes coupled with single scattering deconvolution, convergence correction, and KK analysis. Both the energy loss functions (Fig. 1) and the interband transitions (Fig. 2) determined for α-Al2O3 using SR-VEELS compare well with the VUV results. In addition the use of the spectral line scan method, whereby typically 200 SR-VEEL spectra are acquired along a scan line of 20 nm, helps overcome many uncertainties in the data acquisition and analysis.

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