Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

2003 ◽  
Vol 94 (1) ◽  
pp. 387-391 ◽  
Author(s):  
W. K. Fong ◽  
S. W. Ng ◽  
B. H. Leung ◽  
Charles Surya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Frequency ◽  
Buffer Layers ◽  
Frequency Noise ◽  
Low Frequency Noise

Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy

2002 ◽  
Vol 91 (6) ◽  
pp. 3706-3710 ◽  
Author(s):  
B. H. Leung ◽  
W. K. Fong ◽  
C. F. Zhu ◽  
Charles Surya
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Frequency ◽  
Rf Plasma ◽  
Frequency Noise ◽  
Low Frequency Noise

scholarly journals InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3760 ◽  
Author(s):  
Vilius Palenskis ◽  
Linas Minkevičius ◽  
Jonas Matukas ◽  
Domas Jokubauskis ◽  
Sandra Pralgauskaitė ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Low Frequency ◽  
Growth Conditions ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Thz Detectors ◽  
Beam Equivalent Pressure ◽  
Bow Tie

InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to understand the noise origin, influence of growth conditions and role of defects for device operation. We present a detailed study of photoreflectance, low-frequency noise characteristics and THz sensitivity of InGaAs bow-tie diodes. The diodes are fabricated from InGaAs wafers grown by molecular beam epitaxy (MBE) on semi-insulating InP substrate under different technological conditions. Photoreflectance spectra indicated the presence of strong built-in electric fields reaching up to 49 kV/cm. It was demonstrated that the spectral density of voltage fluctuations at room temperature was found to be proportional to 1/f, while at lower temperatures, 77–200 K, Lorentzian-type spectra dominate due to random telegraph signals caused by individual capture defects. Furthermore, varying bias voltage, we considered optimal conditions for device room temperature operation in the THz range with respect to signal-to-noise ratio. The THz detectors grown with beam equivalent pressure In/Ga ratio equal to 2.04 exhibit the minimal level of the low-frequency noise, while InGaAs layers grown with beam equivalent pressure In/Ga ratio equal to 2.06 are found to be well suited for fabrication of room temperature bow-tie THz detectors enabling sensitivity of 13 V/W and noise equivalent power (NEP) of 200 pW/√Hz at 0.6 THz due to strong built-in electric field effects.

Low-frequency noise in GaAs layers grown by molecular beam epitaxy

1988 ◽  
Vol 31 (7) ◽  
pp. 1215-1219 ◽  
Author(s):  
Munecazu Tacano ◽  
Yoshinobu Sugiyama ◽  
Takashi Taguchi ◽  
Hajime Soga
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Using low-frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

2004 ◽  
Author(s):  
Jean-Guy Tartarin ◽  
Geoffroy Soubercaze-Pun ◽  
Abdelali Rennane ◽  
Laurent Bary ◽  
Robert Plana ◽  
...  
Keyword(s):  
Technology Assessment ◽  
Low Frequency ◽  
Failure Prediction ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemt ◽  
Noise Characterization

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

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