Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy

2002 ◽  
Vol 91 (6) ◽  
pp. 3706-3710 ◽  
Author(s):  
B. H. Leung ◽  
W. K. Fong ◽  
C. F. Zhu ◽  
Charles Surya
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Frequency ◽  
Rf Plasma ◽  
Frequency Noise ◽  
Low Frequency Noise

scholarly journals InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3760 ◽  
Author(s):  
Vilius Palenskis ◽  
Linas Minkevičius ◽  
Jonas Matukas ◽  
Domas Jokubauskis ◽  
Sandra Pralgauskaitė ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Low Frequency ◽  
Growth Conditions ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Thz Detectors ◽  
Beam Equivalent Pressure ◽  
Bow Tie

InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to understand the noise origin, influence of growth conditions and role of defects for device operation. We present a detailed study of photoreflectance, low-frequency noise characteristics and THz sensitivity of InGaAs bow-tie diodes. The diodes are fabricated from InGaAs wafers grown by molecular beam epitaxy (MBE) on semi-insulating InP substrate under different technological conditions. Photoreflectance spectra indicated the presence of strong built-in electric fields reaching up to 49 kV/cm. It was demonstrated that the spectral density of voltage fluctuations at room temperature was found to be proportional to 1/f, while at lower temperatures, 77–200 K, Lorentzian-type spectra dominate due to random telegraph signals caused by individual capture defects. Furthermore, varying bias voltage, we considered optimal conditions for device room temperature operation in the THz range with respect to signal-to-noise ratio. The THz detectors grown with beam equivalent pressure In/Ga ratio equal to 2.04 exhibit the minimal level of the low-frequency noise, while InGaAs layers grown with beam equivalent pressure In/Ga ratio equal to 2.06 are found to be well suited for fabrication of room temperature bow-tie THz detectors enabling sensitivity of 13 V/W and noise equivalent power (NEP) of 200 pW/√Hz at 0.6 THz due to strong built-in electric field effects.

Low-frequency noise in GaAs layers grown by molecular beam epitaxy

1988 ◽  
Vol 31 (7) ◽  
pp. 1215-1219 ◽  
Author(s):  
Munecazu Tacano ◽  
Yoshinobu Sugiyama ◽  
Takashi Taguchi ◽  
Hajime Soga
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Electromigration Effect on Low Frequency Noise in Al Thin Films

1991 ◽  
Vol 30 (Part 1, No. 4) ◽  
pp. 708-710 ◽  
Author(s):  
D. M. Liou ◽  
J. Gong ◽  
C. C. Chen
Keyword(s):  
Thin Films ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Electromigration Effect
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