Domain structure study of SrBi2Ta2O9 ferroelectric thin films by scanning capacitance microscopy

2003 ◽  
Vol 82 (20) ◽  
pp. 3493-3495 ◽  
Author(s):  
Ching-Chich Leu ◽  
Chih-Yuan Chen ◽  
Chao-Hsin Chien ◽  
Mao-Nan Chang ◽  
Fan-Yi Hsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Structure Study ◽  
Ferroelectric Thin Films ◽  
Scanning Capacitance Microscopy

scholarly journals Investigation of domain structure in ferroelectric thin films by means of the Ising model

2021 ◽  
Vol 1730 (1) ◽  
pp. 012041
Author(s):  
E V Menshikov ◽  
O G Maksimova ◽  
S V Osipov ◽  
A V Maksimov
Keyword(s):  
Thin Films ◽  
Ising Model ◽  
Domain Structure ◽  
Ferroelectric Thin Films

Domain structure and stability of MOCVD-derived ferroelectric thin films

1999 ◽  
Vol 221 (1) ◽  
pp. 237-244 ◽  
Author(s):  
C. H. Lin ◽  
B. M. Yen ◽  
R. S. Batzer ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Ferroelectric Thin Films ◽  
Structure And Stability

Phase-Field Modeling of Domain Structure Energetics and Evolution in Ferroelectric Thin Films

2010 ◽  
Vol 77 (4) ◽  
Author(s):  
Antonios Kontsos ◽  
Chad M. Landis
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Phase Field ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Structure Evolution ◽  
Film Properties ◽  
Field Approach ◽  
Domain Structures ◽  
The Continuum

A computational model developed based on the phase-field approach is used to model domain structures in ferroelectric thin films and to quantify the effects of strain and applied electric field on the microstructural evolution, and on the induced dielectric, electrostrictive, and piezoelectric film properties. Theoretically predicted vortex-like polydomain and experimentally observed bidomain and monodomain film morphologies are modeled using the continuum phase-field approach. A nonlinear finite element method is used to solve the boundary value problems relevant to ferroelectric thin films. The computed results agree with the Kittel law for specific ranges of film strain. Simulations that track the domain structure evolution and compute ferroelectric thin film properties given the film dimensions and the imposed electromechanical boundary conditions are also reported.

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