Apparatus for pulsed laser deposition of semiconductor thin films

2003 ◽  
Vol 74 (6) ◽  
pp. 3160-3163 ◽  
Author(s):  
M. Oszwaldowski ◽  
T. Berus ◽  
P. Sydorczuk ◽  
J. Rzeszutek
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Semiconductor Thin Films

P-Type II-VI Compound Semiconductor Thin Films Grown by Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
W. P. Shen ◽  
H. S. Kwok
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Type Ii ◽  
New Approach ◽  
Li Doping ◽  
Semiconductor Thin Films ◽  
In Doping ◽  
P Type

AbstractIn this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.

Pulsed laser deposition of wide-bandgap semiconductor thin films

2003 ◽  
Author(s):  
Donagh O'Mahony ◽  
Eduardo de Posada ◽  
James G. Lunney ◽  
Jean-Paul Mosnier ◽  
Enda McGlynn
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Wide Bandgap ◽  
Laser Deposition ◽  
Wide Bandgap Semiconductor ◽  
Semiconductor Thin Films

Pulsed laser deposition of II–VI semiconductor thin films and their layered structures

2004 ◽  
Vol 371 (1-2) ◽  
pp. 164-167 ◽  
Author(s):  
M. Oszwaldowski ◽  
T. Berus ◽  
J. Rzeszutek ◽  
P. Sidorchuk ◽  
J. Polit ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layered Structures ◽  
Laser Deposition ◽  
Semiconductor Thin Films

Structure and Properties Of III-N Semiconductor Thin Films Grown at Low Temperatures by N-Radical-Assisted Pulsed Laser Deposition

1997 ◽  
Vol 482 ◽  
Author(s):  
F. E. Fernandez ◽  
M. Pumarol ◽  
A. Martinez ◽  
V. Pantojas ◽  
M. Garcia
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitride Semiconductors ◽  
Semiconductor Thin Films ◽  
Substrate Temperatures ◽  
Growth Methods ◽  
Gan Film

AbstractThin films of nitride semiconductors are usually grown by means requiring high substrate temperatures. Deposition techniques providing higher kinetic energies of incident species offer an alternative route which might allow growth of good quality films at lower temperatures. Pulsed Laser Deposition can provide higher kinetic energies than most thin film growth methods. However, III-nitride thin films grown by PLD are often nitrogen deficient. We have been able to obtain good stoichiometry for aluminum nitride films even at room temperature by providing atomic nitrogen at low (thermal) energies during growth. Very good orientation can be obtained on (001) sapphire substrates at moderate temperatures (∼ 500 C). AIN films were grown from either AIN or Al targets. We also report on preliminary work by the same method with GaN film growth from a liquid Ga target.

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

2021 ◽  
Vol 127 ◽  
pp. 105716
Author(s):  
Tianzhen Guo ◽  
Dan Wang ◽  
Yajun Yang ◽  
Xiaoyong Xiong ◽  
Kelin Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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