Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane–hydrogen and silane–helium mixtures

2003 ◽  
Vol 93 (11) ◽  
pp. 9371-9379 ◽  
Author(s):  
O. Saadane ◽  
S. Lebib ◽  
A. V. Kharchenko ◽  
C. Longeaud ◽  
R. Roca i Cabarrocas
Keyword(s):  
Electronic Properties ◽  
Silicon Films ◽  
Helium Mixtures ◽  
Optical And Electronic Properties

Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150°C

2000 ◽  
Vol 266-269 ◽  
pp. 263-268 ◽  
Author(s):  
R Butté ◽  
S Vignoli ◽  
M Meaudre ◽  
R Meaudre ◽  
O Marty ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Silicon Films ◽  
Optical And Electronic Properties

Plasma Deposition of Wide Gap, Highly Photoconductive a-Si:H Thin Films from Disilane-Helium Mixtures

1984 ◽  
Vol 38 ◽  
Author(s):  
G. Rajeswaran ◽  
P. E. Vanier ◽  
R. R. Corderman ◽  
F. J. Kampas
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Plasma Deposition ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Helium Mixtures ◽  
Wide Gap ◽  
Made In

AbstractWide gap (>1.9 eV), photoconductive, intrinsic amorphous silicon films were made in a UHV system from Si2H6 -He mixtures. The hydrogen concentrations, optical gaps and photoconductivities were measured. Unlike films made from SiH4, Si2H6-produced films exhibit excellent electronic properties even at low deposition temperatures. The ratio of AM1 photoconductivity to dark conductivity was as high as 107.

Optical and electronic properties of HWCVD and PECVD silicon films irradiated using excimer and Nd:Yag lasers

2006 ◽  
Vol 501 (1-2) ◽  
pp. 125-128 ◽  
Author(s):  
M.Z. Shaikh ◽  
K.A. O'Neill ◽  
S. Anthony ◽  
S.K. Persheyev ◽  
M.J. Rose
Keyword(s):  
Electronic Properties ◽  
Silicon Films ◽  
Nd:Yag Lasers ◽  
Optical And Electronic Properties

1,1’-Biaceanthrylene and 2,2'-Biaceanthrylene: Models for Linking Larger Polycyclic Aromatic Hydrocarbons via Five-Membered Rings

2019 ◽  
Author(s):  
Yachu Du ◽  
Kyle Plunkett
Keyword(s):  
Polycyclic Aromatic Hydrocarbons ◽  
Polycyclic Aromatic Hydrocarbon ◽  
Aromatic Hydrocarbon ◽  
Electronic Properties ◽  
Aromatic Hydrocarbons ◽  
Model Systems ◽  
Redox Potentials ◽  
Dimer Model ◽  
Optical And Electronic Properties ◽  
Polycyclic Aromatic

We show that polycyclic aromatic hydrocarbon (PAH) chromophores that are linked between two five-membered rings can access planarized structures with reduced optical gaps and redox potentials. Two aceanthrylene chromophores were connected into dimer model systems with the chromophores either projected outward (2,2’-biaceanthrylene) or inward (1,1’-biaceanthrylene) and the optical and electronic properties were compared. Only the planar 2,2’-biaceanthrylene system showed significant reductions of the optical gaps (1 eV) and redox potentials in relation to the aceanthrylene monomer.<br>

1,1’-Biaceanthrylene and 2,2'-Biaceanthrylene: Models for Linking Larger Polycyclic Aromatic Hydrocarbons via Five-Membered Rings

2019 ◽  
Author(s):  
Yachu Du ◽  
Kyle Plunkett
Keyword(s):  
Polycyclic Aromatic Hydrocarbons ◽  
Polycyclic Aromatic Hydrocarbon ◽  
Aromatic Hydrocarbon ◽  
Electronic Properties ◽  
Aromatic Hydrocarbons ◽  
Model Systems ◽  
Redox Potentials ◽  
Dimer Model ◽  
Optical And Electronic Properties ◽  
Polycyclic Aromatic

We show that polycyclic aromatic hydrocarbon (PAH) chromophores that are linked between two five-membered rings can access planarized structures with reduced optical gaps and redox potentials. Two aceanthrylene chromophores were connected into dimer model systems with the chromophores either projected outward (2,2’-biaceanthrylene) or inward (1,1’-biaceanthrylene) and the optical and electronic properties were compared. Only the planar 2,2’-biaceanthrylene system showed significant reductions of the optical gaps (1 eV) and redox potentials in relation to the aceanthrylene monomer.<br>

scholarly journals Defect Processes in Halogen Doped SnO2

2021 ◽  
Vol 11 (2) ◽  
pp. 551
Author(s):  
Petros-Panagis Filippatos ◽  
Nikolaos Kelaidis ◽  
Maria Vasilopoulou ◽  
Dimitris Davazoglou ◽  
Alexander Chroneos
Keyword(s):  
Electronic Properties ◽  
Tin Oxide ◽  
Density Functional ◽  
Structural Changes ◽  
High Dielectric Constant ◽  
Density Functional Theory Calculations ◽  
Functional Theory ◽  
Optical And Electronic Properties ◽  
High Dielectric ◽  
Gap States

In the present study, we performed density functional theory calculations (DFT) to investigate structural changes and their impact on the electronic properties in halogen (F, Cl, Br, and I) doped tin oxide (SnO2). We performed calculations for atoms intercalated either at interstitial or substitutional positions and then calculated the electronic structure and the optical properties of the doped SnO2. In all cases, a reduction in the bandgap value was evident, while gap states were also formed. Furthermore, when we insert these dopants in interstitial and substitutional positions, they all constitute a single acceptor and donor, respectively. This can also be seen in the density of states through the formation of gap states just above the valence band or below the conduction band, respectively. These gap states may contribute to significant changes in the optical and electronic properties of SnO2, thus affecting the metal oxide’s suitability for photovoltaics and photocatalytic devices. In particular, we found that iodine (I) doping of SnO2 induces a high dielectric constant while also reducing the oxide’s bandgap, making it more efficient for light-harvesting applications.

Sign in / Sign up

Export Citation Format

Share Document