Valence band alignment with a small spike at the CuI/CuInS2 interface

I. Konovalov; R. Szargan

doi:10.1063/1.1564634

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Nanoscale Research Letters ◽

10.1186/s11671-019-3181-x ◽

2019 ◽

Vol 14 (1) ◽

Cited By ~ 1

Author(s):

Ya-Wei Huan ◽

Ke Xu ◽

Wen-Jun Liu ◽

Hao Zhang ◽

Dmitriy Anatolyevich Golosov ◽

...

Keyword(s):

Valence Band ◽

Transition Metal Dichalcogenides ◽

Three Dimensional ◽

Optoelectronic Devices ◽

Band Alignment ◽

Band Offsets ◽

Group Iii ◽

Nanoelectronic Devices ◽

Metal Dichalcogenides ◽

Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

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Calculation of Band Offsets of Mg(OH)2-Based Heterostructures

Electronic Materials ◽

10.3390/electronicmat2030019 ◽

2021 ◽

Vol 2 (3) ◽

pp. 274-283

Author(s):

Masaya Ichimura

Keyword(s):

Solar Cells ◽

Valence Band ◽

Dye Sensitized Solar Cells ◽

Band Alignment ◽

First Principles Calculation ◽

Band Edge ◽

Level Energy ◽

Type I ◽

Valence Band Edge ◽

Generalized Gradient

The band alignment of Mg(OH)2-based heterostructures is investigated based on first-principles calculation. (111)-MgO/(0001)-Mg(OH)2 and (0001)-wurtzite ZnO/(0001)-Mg(OH)2 heterostructures are considered. The O 2s level energy is obtained for each O atom in the heterostructure supercell, and the band edge energies are evaluated following the procedure of the core-level spectroscopy. The calculation is based on the generalized gradient approximation with the on-site Coulomb interaction parameter U considered for Zn. For MgO/Mg(OH)2, the band alignment is of type II, and the valence band edge of MgO is higher by 1.6 eV than that of Mg(OH)2. For ZnO/Mg(OH)2, the band alignment is of type I, and the valence band edge of ZnO is higher by 0.5 eV than that of Mg(OH)2. Assuming the transitivity rule, it is expected that Mg(OH)2 can be used for certain types of heterostructure solar cells and dye-sensitized solar cells to improve the performance.

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Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy

10.1063/1.3606242 ◽

2011 ◽

Author(s):

Shailesh K. Khamari ◽

V. K. Dixit ◽

A. K. Sinha ◽

S. Banik ◽

S. R. Barman ◽

...

Keyword(s):

Valence Band ◽

Photoelectron Spectroscopy ◽

Band Alignment ◽

X Ray

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The valence band alignment at ultrathin SiO2/Si interfaces

Journal of Applied Physics ◽

10.1063/1.363895 ◽

1997 ◽

Vol 81 (3) ◽

pp. 1606-1608 ◽

Cited By ~ 134

Author(s):

J. L. Alay ◽

M. Hirose

Keyword(s):

Valence Band ◽

Band Alignment

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NOVEL MEASUREMENT OF THE BAND DISCONTINUITIES IN (Al,Ga)As HETEROJUNCTIONS

MRS Proceedings ◽

10.1557/proc-56-307 ◽

1985 ◽

Vol 56 ◽

Cited By ~ 1

Author(s):

B. A. WILSON ◽

P. DAWSON ◽

C. W. TU ◽

R. C. MILLER

Keyword(s):

Valence Band ◽

Binding Energies ◽

Band Alignment ◽

Material System ◽

Valence Band Offset ◽

Quantum Well Structures ◽

Accurate Knowledge ◽

Novel Method ◽

Band Alignments ◽

Valence Band Discontinuity

AbstractA novel method has been used to obtain a direct and accurate measure of the valence-band discontinuity AlyGa1−yAs/AlAs heterojunctions in quantum-well structures. The technique takes advantage of the crossover occurring at a critical Al concentration above which the indirect X minimum in the AlAs becomes the lowest-energy conduction band in the system. Within these “staggered” band alignment structures, photoexcited electrons and holes are spatially separated, and recombination occurs across the interface. The resulting emission fixes the valence-band offset to within 1% without accurate knowledge of other system parameters, such as effective masses and exciton or dopant binding energies. These measurements represent the first direct optical confirmation of staggered band alignments in this technologically important material system.

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Valence Band Alignment at Cadmium Selenide Quantum Dot and Zinc Oxide (101̅0) Interfaces

The Journal of Physical Chemistry C ◽

10.1021/jp7113434 ◽

2008 ◽

Vol 112 (22) ◽

pp. 8419-8423 ◽

Cited By ~ 88

Author(s):

Brooke Carlson ◽

Kurtis Leschkies ◽

Eray S. Aydil ◽

X.-Y. Zhu

Keyword(s):

Zinc Oxide ◽

Quantum Dot ◽

Cadmium Selenide ◽

Valence Band ◽

Band Alignment

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Valence band alignment and hole transport in amorphous/crystalline silicon heterojunction solar cells

Applied Physics Letters ◽

10.1063/1.4926402 ◽

2015 ◽

Vol 107 (1) ◽

pp. 013902 ◽

Cited By ~ 36

Author(s):

Mathias Mews ◽

Martin Liebhaber ◽

Bernd Rech ◽

Lars Korte

Keyword(s):

Solar Cells ◽

Valence Band ◽

Crystalline Silicon ◽

Hole Transport ◽

Band Alignment ◽

Heterojunction Solar Cells ◽

Silicon Heterojunction Solar Cells

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Optical Investigation of the Band Offset of CdxZn1−xTe /ZnTe and ZnSexTe1−x/ZnTe Superlattices

MRS Proceedings ◽

10.1557/proc-198-427 ◽

1990 ◽

Vol 198 ◽

Author(s):

Y. Rajakarunanayake ◽

M. C. Phillips ◽

J. O. Mccaldin ◽

D. H. Chow ◽

D. A. Collins ◽

...

Keyword(s):

Valence Band ◽

Band Alignment ◽

Band Offset ◽

Type I ◽

Optical Investigation ◽

Type Ii ◽

Carrier Injection ◽

Valence Band Offset ◽

Small Component ◽

Strained Layer Superlattices

ABSTRACTWe have analyzed photoluminescence spectra from CdxZnl−xTe /ZnTe and ZnSexTel−x/ZnTe strained layer superlattices grown by MBE, and obtained the band offsets by fitting to theory. We find that the valence band offset of the CdTe/ZnTe system is quite small (-50± 160 meV). In CdxZnl−xTe /ZnTe superlattices, the electrons and heavy holes are confined in the CdxZn1−xTe layers (type I), while the light holes are confined in the ZnTe layers (type II). On the other hand, the photoluminescence data from the ZnSexTe1−x /ZnTe superlattices suggest that the band alignment is type II, with a large valence band offset (−907 ± 120 meV). We also investigated the band bowing in the ZnSexTel−x alloys by optical spectroscopy, and found that there is only a small component of bowing in the valence band, while most of the bowing occurs in the conduction band. Based on our results for band alignments, we evaluate the prospects for minority carrier injection in wide bandgap heterostructures based on ZnSe, ZnTe, and CdTe.

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