Valence Band Alignment at Cadmium Selenide Quantum Dot and Zinc Oxide (101̅0) Interfaces

2008 ◽  
Vol 112 (22) ◽  
pp. 8419-8423 ◽  
Author(s):  
Brooke Carlson ◽  
Kurtis Leschkies ◽  
Eray S. Aydil ◽  
X.-Y. Zhu
Keyword(s):  
Zinc Oxide ◽  
Quantum Dot ◽  
Cadmium Selenide ◽  
Valence Band ◽  
Band Alignment

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

scholarly journals Calculation of Band Offsets of Mg(OH)2-Based Heterostructures

2021 ◽  
Vol 2 (3) ◽  
pp. 274-283
Author(s):  
Masaya Ichimura
Keyword(s):  
Solar Cells ◽  
Valence Band ◽  
Dye Sensitized Solar Cells ◽  
Band Alignment ◽  
First Principles Calculation ◽  
Band Edge ◽  
Level Energy ◽  
Type I ◽  
Valence Band Edge ◽  
Generalized Gradient

The band alignment of Mg(OH)2-based heterostructures is investigated based on first-principles calculation. (111)-MgO/(0001)-Mg(OH)2 and (0001)-wurtzite ZnO/(0001)-Mg(OH)2 heterostructures are considered. The O 2s level energy is obtained for each O atom in the heterostructure supercell, and the band edge energies are evaluated following the procedure of the core-level spectroscopy. The calculation is based on the generalized gradient approximation with the on-site Coulomb interaction parameter U considered for Zn. For MgO/Mg(OH)2, the band alignment is of type II, and the valence band edge of MgO is higher by 1.6 eV than that of Mg(OH)2. For ZnO/Mg(OH)2, the band alignment is of type I, and the valence band edge of ZnO is higher by 0.5 eV than that of Mg(OH)2. Assuming the transitivity rule, it is expected that Mg(OH)2 can be used for certain types of heterostructure solar cells and dye-sensitized solar cells to improve the performance.

The Effect of Particle Size on the Charge Balance Property of Quantum Dot Light-Emitting Devices Using Zinc Oxide Nanoparticles

2021 ◽  
Vol 21 (7) ◽  
pp. 3795-3799
Author(s):  
Mi-Young Ha ◽  
Chang Kyo Kim ◽  
Dae-Gyu Moon
Keyword(s):  
Particle Size ◽  
Zinc Oxide ◽  
Quantum Dot ◽  
Zinc Oxide Nanoparticles ◽  
Transport Layer ◽  
Oxide Nanoparticles ◽  
Zno Nps ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Maximum Current

Zinc oxide nanoparticles (ZnO NPs) have been widely used as an inorganic electron transport layer (ETL) in quantum dot light-emitting devices (QLEDs) due to their excellent electrical properties. Here, we report the effect of ZnO NPs inorganic ETL of different particle sizes on the electrical and optical properties of QLEDs. We synthesized ZnO NPs into the size of 3 nm and 8 nm respectively and used them as an inorganic ETL of QLEDs. The particle size and crystal structure of the synthesized ZnO NPs were verified by Transmission electron microscopy (TEM) analysis and X-ray pattern analysis. The device with 8 nm ZnO NPs ETL exhibited higher efficiency than the 3 nm ZnO NPs ETL device in the single hole transport layer (HTL) QLEDs. The maximum current efficiency of 19.0 cd/A was achieved in the device with 8 nm ZnO NPs layer. We obtained the maximum current efficiency of 17.5 cd/A in 3 nm ZnO NPs device by optimizing bilayer HTL and ZnO NPs ETL.

scholarly journals Modifying Titania Using the Molten-Salt-Assisted Self-Assembly Process for Cadmium Selenide–Quantum Dot-Sensitized Photoanodes

ACS Omega ◽  
2017 ◽  
Vol 2 (8) ◽  
pp. 4982-4990 ◽  
Author(s):  
Muammer Y. Yaman ◽  
Ahmet Selim Han ◽  
Jayasundera Bandara ◽  
Cüneyt Karakaya ◽  
Ömer Dag
Keyword(s):  
Quantum Dot ◽  
Molten Salt ◽  
Cadmium Selenide ◽  
Self Assembly ◽  
Assembly Process
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