Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

2003 ◽  
Vol 82 (9) ◽  
pp. 1386-1388 ◽  
Author(s):  
F. Natali ◽  
F. Semond ◽  
J. Massies ◽  
D. Byrne ◽  
S. Laügt ◽  
...  
Keyword(s):  
Refractive Index ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Molecular Beam ◽  
Threading Dislocation ◽  
Threading Dislocation Density

scholarly journals Single-Crystalline Si1−xGex (x = 0.5~1) Thin Films on Si (001) with Low Threading Dislocation Density Prepared by Low Temperature Molecular Beam Epitaxy

2019 ◽  
Vol 9 (9) ◽  
pp. 1772
Author(s):  
Gu ◽  
Zhao ◽  
Ye ◽  
Deng ◽  
Lu
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Dislocation Density ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Relaxation Mechanism ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Typical Strain

Single-crystalline Si1−xGex thin films on Si (100) with low threading dislocation density (TDD) are highly desired for semiconductor industrials. It is challenging to suppress the TDD since there is a large mismatch (4.2%) between Ge and Si—it typically needs 106–107/cm2 TDD for strain relaxation, which could, however, cause device leakage under high voltage. Here, we grew Si1−xGex (x = 0.5–1) films on Si (001) by low temperature molecular beam epitaxy (LT-MBE) at 200 °C, which is much lower than the typical temperature of 450–600 °C. Encouragingly, the Si1−xGex thin films grown by LT-MBE have shown a dramatically reduced TDD down to the 103–104/cm2 level. Using transmission electron microscopy (TEM) with atomic resolution, we discovered a non-typical strain relaxation mechanism for epitaxial films grown by LT-MBE. There are multiple-layered structures being introduced along out-of-plane-direction during film growth, effectively relaxing the large strain through local shearing and subsequently leading to an order of magnitude lower TDD. We presented a model for the non-typical strain relaxation mechanism for Si1−xGex films grown on Si (001) by LT-MBE.

High-Irradiance Degradation Studies of Metamorphic 1eV GaInAs Solar Cells

2012 ◽  
Vol 1432 ◽  
Author(s):  
Ryan M. France ◽  
Myles A. Steiner
Keyword(s):  
Solar Cells ◽  
Active Region ◽  
Dislocation Density ◽  
Dark Current ◽  
Degradation Mechanism ◽  
Control Cell ◽  
High Irradiance ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Degradation Studies

ABSTRACTInitial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×106 cm-2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in Voc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV Voc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

Enhanced reduction in threading dislocation density in Ge grown on porous silicon during annealing due to porous buffer reconstruction

2015 ◽  
Vol 213 (1) ◽  
pp. 96-101
Author(s):  
G. Calabrese ◽  
S. Baricordi ◽  
P. Bernardoni ◽  
D. De Salvador ◽  
M. Ferroni ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Threading Dislocation Density

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

A surfactant-mediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface

1999 ◽  
Vol 75 (11) ◽  
pp. 1586-1588 ◽  
Author(s):  
J. L. Liu ◽  
C. D. Moore ◽  
G. D. U’Ren ◽  
Y. H. Luo ◽  
Y. Lu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Smooth Surface ◽  
Threading Dislocation ◽  
Threading Dislocation Density
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