Magnetic field-induced degradation of magnetic properties in molecular beam epitaxy grown FeMn/NiFe exchange-coupled bilayers

2003 ◽  
Vol 93 (10) ◽  
pp. 7720-7722 ◽  
Author(s):  
Y. S. Choi ◽  
A. K. Petford-Long ◽  
R. C. C. Ward
2019 ◽  
Vol 507 ◽  
pp. 163-167 ◽  
Author(s):  
Taro Komori ◽  
Akihito Anzai ◽  
Toshiki Gushi ◽  
Kaoru Toko ◽  
Takashi Suemasu

Author(s):  
S.S. Khludkov ◽  
◽  
I.A. Prudaev ◽  
L.O. Root ◽  
O.P. Tolbanov ◽  
...  

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.


1993 ◽  
Vol 313 ◽  
Author(s):  
Fred Lacy ◽  
Ernest L. Carter ◽  
Steven L. Richardson

ABSTRACTRecent advances in molecular beam epitaxy have renewed research on the physics of artificially structured magnetic superlattices. In particular, there has been much theoretical research on the propagation of magnetic spin waves or magnetic polaritons in magnetic superlattices.1 In this work, we have studied the effect of modulating both the period of an antiferromagnetic/non-Magnetic semi-infinite superlattice and the relative thickness of its individual layers to see how the dispersion relationships co (k) for bulk and surface magnetic polaritons are effected. We have also calculated the effect of an external magnetic field on (u (k) and our calculation goes beyond the magnetostatic approximation by taking retardation effects into account.


2009 ◽  
Vol 54 (2) ◽  
pp. 633-636 ◽  
Author(s):  
C. X. Gao ◽  
F. C. Yu ◽  
D. J. Kim ◽  
H. J. Kim ◽  
Y. E. Ihm ◽  
...  

2014 ◽  
Vol 31 (7) ◽  
pp. 078103 ◽  
Author(s):  
Dong Pan ◽  
Si-Liang Wang ◽  
Hai-Long Wang ◽  
Xue-Zhe Yu ◽  
Xiao-Lei Wang ◽  
...  

2000 ◽  
Vol 648 ◽  
Author(s):  
B. Schirmer ◽  
X. Liu ◽  
M. Wuttig

AbstractUltrathin iron films grown on Cu(100) have been found to exhibit a rich variety of structural and magnetic phases. In the present work, Fe/Ni bilayers have been prepared by molecular beam epitaxy to explore novel magnetic phenomena introduced by the ferromagnetic (FM) Ni underlayer. Unusual properties have been observed by measuring the temperature dependent magnetic properties. For 5.3 ML Fe on 7 ML Ni, a temperature dependent exchange coupling in the Fe film has been observed between the FM surface layer and FM interface layer.


2011 ◽  
Vol 1290 ◽  
Author(s):  
J. K. Mishra ◽  
S. Dhar ◽  
M. A. Khaderabad ◽  
O. Brandt

ABSTRACTGd:GaN layers grown with different Gd concentrations by molecular beam epitaxy (MBE) are studied using photoconductivity and photo-thermoelectric power spectroscopy. Our study reveals that the incorporation of Gd produces a large concentration of acceptor-like defects in the GaN lattice. The defect band is found to be located ~450meV above the valence band. Moreover, the concentration of defects is found to increase with the Gd concentration. The effect of annealing on the structural and the magnetic properties of GaN implanted with Gd is also investigated. A clear correlation between the saturation magnetization and the defect density is observed in implanted samples. The colossal magnetic moment per Gd ion and the ferromagnetism observed in this material is explained in terms of the formation of giant defect cluster around each Gd ion.


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