Magnetic interaction between GaMnAs layers via spin-polarized quasi-two-dimensional hole gas: Monte Carlo simulation

M. A. Boselli; L. Loureiro da Silva; I. C. da Cunha Lima; A. Ghazali

doi:10.1063/1.1556112

Magnetic interaction between GaMnAs layers via spin-polarized quasi-two-dimensional hole gas: Monte Carlo simulation

Journal of Applied Physics ◽

10.1063/1.1556112 ◽

2003 ◽

Vol 93 (10) ◽

pp. 6790-6792 ◽

Cited By ~ 1

Author(s):

M. A. Boselli ◽

L. Loureiro da Silva ◽

I. C. da Cunha Lima ◽

A. Ghazali

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Magnetic Interaction ◽

Two Dimensional ◽

Spin Polarized

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Two-dimensional dose distribution measurement based on rotational optical fiber array: A Monte Carlo simulation study

Radiation Measurements ◽

10.1016/j.radmeas.2021.106556 ◽

2021 ◽

Vol 142 ◽

pp. 106556

Author(s):

Pinyuan Xu ◽

Changran Geng ◽

Diyun Shu ◽

Xiaobin Tang ◽

Huan Liu ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Optical Fiber ◽

Simulation Study ◽

Dose Distribution ◽

Two Dimensional ◽

Monte Carlo Simulation Study ◽

Fiber Array ◽

Distribution Measurement ◽

Optical Fiber Array

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Periodic ordering of clusters and stripes in a two-dimensional lattice model. II. Results of Monte Carlo simulation

The Journal of Chemical Physics ◽

10.1063/1.4871901 ◽

2014 ◽

Vol 140 (16) ◽

pp. 164708 ◽

Cited By ~ 31

Author(s):

N. G. Almarza ◽

J. Pȩkalski ◽

A. Ciach

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Lattice Model ◽

Two Dimensional ◽

Dimensional Lattice

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Indirect exchange in (Ga,Mn)As bilayers via the spin-polarized inhomogeneous hole gas: Monte Carlo simulation

Physical Review B ◽

10.1103/physrevb.68.085319 ◽

2003 ◽

Vol 68 (8) ◽

Cited By ~ 25

Author(s):

M. A. Boselli ◽

I. C. da Cunha Lima ◽

A. Ghazali

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Indirect Exchange ◽

Spin Polarized

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Two Phase Transitions in the Two-Dimensional Nematic Three-Vector Model with No Quasi-Long-Range Order: Monte Carlo Simulation of the Density of States

Physical Review Letters ◽

10.1103/physrevlett.121.217801 ◽

2018 ◽

Vol 121 (21) ◽

Cited By ~ 2

Author(s):

B. Kamala Latha ◽

V. S. S. Sastry

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Phase Transitions ◽

Long Range ◽

Density Of States ◽

Range Order ◽

Vector Model ◽

Long Range Order ◽

Two Dimensional ◽

Two Phase

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Two Dimensional Monte Carlo Simulation of Ion Implantation in Crystalline Silicon Considering Damage Formation

Simulation of Semiconductor Devices and Processes ◽

10.1007/978-3-7091-6657-4_89 ◽

1993 ◽

pp. 361-364

Author(s):

A. Simionescu ◽

G. Hobler

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Ion Implantation ◽

Crystalline Silicon ◽

Two Dimensional

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Quantum Monte Carlo simulation of spin-polarized H

Physical Review B ◽

10.1103/physrevb.75.064506 ◽

2007 ◽

Vol 75 (6) ◽

Cited By ~ 12

Author(s):

L. Vranješ Markić ◽

J. Boronat ◽

J. Casulleras

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Quantum Monte Carlo ◽

Quantum Monte Carlo Simulation ◽

Spin Polarized

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Monte Carlo simulation of a two-dimensional electron gas on a disordered host lattice

Low Temperature Physics ◽

10.1063/1.3331589 ◽

2010 ◽

Vol 36 (3) ◽

pp. 243-249 ◽

Cited By ~ 5

Author(s):

V. V. Slavin

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Gas ◽

Host Lattice ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Monte Carlo simulation of the effects of higher-order anisotropy on the spin reorientation transition in the two-dimensional Heisenberg model with long-range interactions

Physical Review B ◽

10.1103/physrevb.87.184417 ◽

2013 ◽

Vol 87 (18) ◽

Cited By ~ 6

Author(s):

M. C. Ambrose ◽

R. L. Stamps

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Long Range ◽

Heisenberg Model ◽

Higher Order ◽

Spin Reorientation ◽

Two Dimensional ◽

Spin Reorientation Transition ◽

Long Range Interactions

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Monte Carlo Simulation of Growth Process of Two-Dimensional Quasicrystal

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.3612 ◽

1995 ◽

Vol 34 (Part 1, No. 7A) ◽

pp. 3612-3618 ◽

Cited By ~ 2

Author(s):

Yasushi Sasajima ◽

Takahiro Ohtsuka ◽

Katsumi Adachi ◽

Minoru Ichimura ◽

Satoru Ozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Growth Process ◽

Two Dimensional

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MONTE CARLO SIMULATION OF SPIN RELAXATION IN NANOWIRES AND 2-D CHANNELS OF II–VI SEMICONDUCTORS

SPIN ◽

10.1142/s2010324712500075 ◽

2012 ◽

Vol 02 (02) ◽

pp. 1250007 ◽

Cited By ~ 2

Author(s):

ASHUTOSH SHARMA ◽

SWETALI NIMJE ◽

AKSHAYKUMAR SALIMATH ◽

BAHNIMAN GHOSH

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

External Field ◽

Spin Relaxation ◽

Simulation Method ◽

Relaxation Length ◽

Factors Affecting ◽

Spin Dephasing ◽

Spin Polarized ◽

The Many

We have analyzed spin relaxation behavior of various II–VI semiconductors for nanowire structure and 2-D channel by simulating spin polarized transport through a semiclassical approach. Monte Carlo simulation method has been applied to simulate our model. D'yakonov–Perel mechanism and Elliot–Yafet mechanism are dominant for spin relaxation in II–VI semiconductors. Variation in spin relaxation length with external field has been analyzed and comparison is drawn between nanowire and 2-D channels. Spin relaxation lengths of various II–VI semiconductors are compared at an external field of 1 kV/cm to understand the predominant factors affecting spin dephasing in them. Among the many results obtained, most noticeable one is that spin relaxation length in nanowires is many times greater than that in 2-D channel.

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