scholarly journals Nanometer-scale metallic grains connected with atomic-scale conductors

2003 ◽  
Vol 93 (6) ◽  
pp. 3501-3508 ◽  
Author(s):  
A. Anaya ◽  
A. L. Korotkov ◽  
M. Bowman ◽  
J. Waddell ◽  
D. Davidovic
1995 ◽  
Vol 418 ◽  
Author(s):  
C. T Whitea ◽  
J. J. C. Barretta ◽  
J. W. Mintmirea ◽  
M. L. Elert ◽  
D. H. Robertson

AbstractBecause of its importance in designing safer, more reliable explosives the shock to detonation transition in condensed phase energetic materials has long been a subject of experimental and theoretical study. This transition is thought to involve local hot-spots which represent regions in the material which couple efficiently to the shock wave leading to a locally higher temperature and ultimately initiation. However, how at the atomic scale energy is transferred from the shock front into these local “hot spots” remains a key question to be answered in studies of the predetonation process. In this paper we report results of molecular dynamics simulations that suggest that even nanometer scale defects can play an important role in the shock to detonation transition.


Nanoscale ◽  
2014 ◽  
Vol 6 (5) ◽  
pp. 2613-2617 ◽  
Author(s):  
Attila Geresdi ◽  
Miklós Csontos ◽  
Agnes Gubicza ◽  
András Halbritter ◽  
György Mihály

We demonstrate Ag2S memristive devices optimized for high speed operation. Andreev reflection spectroscopy reveals highly transparent, atomic scale conducting channels.


2021 ◽  
Author(s):  
Xiaodan Xu ◽  
Cong Wang ◽  
Wenqi Xiong ◽  
Yang Liu ◽  
Donghao Yang ◽  
...  

Abstract Strain engineering can effectively modify the materials lattice parameters at atomic scale, hence it has become an efficient method for tuning the physical properties of two-dimensional (2D) materials. The study of the strain regulated interlayer coupling is deserved for different kinds of heterostructures. Here, we systematically studied the strain engineering of WSe2/WS2 heterostructures as well as their constituent monolayers. The measured Raman and photoluminescence spectra demonstrate that the strain can evidently modulate the phonon energy and exciton emission of monolayer WSe2 and WS2 as well as the WSe2/WS2 heterostructures. The tensile strain can tune the electronic band structure of WSe2/WS2 heterostructure, as well as enhance the interlayer coupling. It is further revealed that the photoluminescence intensity ratio of WS2 to WSe2 in our WSe2/WS2 heterobilayer increases monotonically with tensile strain. These findings can broaden the understanding and practical application of strain engineering in 2D materials with nanometer-scale resolution.


MRS Bulletin ◽  
2009 ◽  
Vol 34 (12) ◽  
pp. 900-906 ◽  
Author(s):  
Sangtae Kim ◽  
Shu Yamaguchi ◽  
James A. Elliott

AbstractThe phenomenon of ion migration in solids forms the basis for a wide variety of electrochemical applications, ranging from power generators and chemical sensors to ionic switches. Solid-state ionics (SSI) is the field of research concerning ionic motions in solids and the materials properties associated with them. Owing to the ever-growing technological importance of electrochemical devices, together with the discoveries of various solids displaying superior ionic conductivity at relatively low temperatures, research activities in this field have grown rapidly since the 1960s, culminating in “nanoionics”: the area of SSI concerned with nanometer-scale systems. This theme issue introduces key research issues that we believe are, and will remain, the main research topics in nanoionics and SSI during the 21st century. These include the application of cutting-edge experimental techniques, such as secondary ion mass spectroscopy and nuclear magnetic resonance, to investigate ionic diffusion in both bulk solids and at interfaces, as well as the use of atomic-scale modeling as a virtual probe of ionic conduction mechanisms and defect interactions. We highlight the effects of protonic conduction at the nanometer scale and how better control of interfaces can be employed to make secondary lithium batteries based on nanoionics principles. Finally, in addition to power generation and storage, the emergence of atomic switches based on cation diffusion shows great promise in developing next-generation transistors using SSI.


Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6669
Author(s):  
Haibiao Wu ◽  
Zhen Wang ◽  
Te Zhu ◽  
Qiu Xu ◽  
Baoyi Wang ◽  
...  

The atomic-scale defects such as (deuterium, helium)-vacancy clusters in nuclear energy materials are one of the causes for the deterioration of the macroscopic properties of materials. Unfortunately, they cannot be observed by transmission electron microscopy (TEM) before they grow to the nanometer scale. Positron annihilation spectroscopy (PAS) has been proven to be sensitive to open-volume defects, and could characterize the evolution of the size and concentration of the vacancy-like nanoclusters. We have investigated the effects of He-D interaction on the formation of nanoscale cavities in Fe9Cr alloys by PAS and TEM. The results show that small-sized bubbles are formed in the specimen irradiated with 5 × 1016 He+/cm2, and the subsequent implanted D-ions contribute to the growth of these helium bubbles. The most likely reason is that helium bubbles previously formed in the sample captured deuterium injected later, causing bubbles to grow. In the lower dose He-irradiated samples, a large number of small dislocations and vacancies are generated and form helium-vacancy clusters with the helium atoms.


MRS Advances ◽  
2018 ◽  
Vol 3 (8-9) ◽  
pp. 463-468 ◽  
Author(s):  
Alexandre F. Fonseca ◽  
Douglas S. Galvão

ABSTRACTIn spite of years of intense research, graphene continues to produce surprising results. Recently, it was experimentally observed that under certain conditions graphene can self-drive its tearing and peeling from substrates. This process can generate long, micrometer sized, folded nanoribbons without the action of any external forces. Also, during this cracking-like propagation process, the width of the graphene folded ribbon continuously decreases and the process only stops when the width reaches about few hundreds nanometers in size. It is believed that interplay between the strain energy of folded regions, breaking of carbon-carbon covalent bonds, and adhesion of graphene-graphene and graphene-substrate are the most fundamental features of this process, although the detailed mechanisms at atomic scale remain unclear. In order to gain further insights on these processes we carried out fully atomistic reactive molecular dynamics simulations using the AIREBO potential as available in the LAMMPS computational package. Although the reported tearing/peeling experimental observations were only to micrometer sized structures, our results showed that they could also occur at nanometer scale. Our preliminary results suggest that the graphene tearing/peeling process originates from thermal energy fluctuations that results in broken bonds, followed by strain release that creates a local elastic wave that can either reinforce the process, similar to a whip cracking propagation, or undermine it by producing carbon dangling bonds that evolve to the formation of bonds between the two layers of graphene. As the process continues in time and the folded graphene decreases in width, the carbon-carbon bonds at the ribbon edge and interlayer bonds get less stressed, thermal fluctuations become unable to break them and the process stops.


Author(s):  
Neil Zuckerman ◽  
Jennifer R. Lukes

Dependent scattering of acoustic phonons by multiple nanometer-scale inclusions in anisotropic media is investigated using a new molecular dynamics simulation technique. The spectral-directional characteristics of the scattering are found by calculation of three-dimensional scattering phase functions and cross sections for inclusions of varying sizes in various spatial arrangements. The technique enables computation of the effects of reflected wave interference and sequential scattering, mode conversion, lattice strain, elastic anisotropy, and atomic-scale granularity on acoustic phonon scattering from structured inclusions. The results will improve understanding and prediction of heat transfer in quantum-dot superlattices and other engineered thermal materials with nanometer-scale structures.


MRS Bulletin ◽  
1999 ◽  
Vol 24 (2) ◽  
pp. 20-26 ◽  
Author(s):  
B.M. Clemens ◽  
H. Kung ◽  
S.A. Barnett

Nanometer-scale multilayer materials exhibit a wealth of interesting structural and mechanical property behaviors. Physical-vapor-deposition technology allows almost unlimited freedom to choose among elements, alloys, and Compounds as layering constituents and to design and produce materials with compositional and structural periodicities approaching the atomic Scale. These materials have tremendous interface area density, approaching 106 mm/mm3, so that a Square centimeter area of a one-micron-thick multilayer film with a bilayer period of 2 nm has an interface area of roughly 1,000 cm2. Hence interfacial effects can dominate multilayer structure and properties leading to unusually large strains and frequently stabilization of metastable structures. The atomic-scale layering of different materials also leads to very high hardnesses and good wear resistance. These materials are a test-bed for examination of the fundamental aspects of phase stability and for exploring mechanical strengthening mechanisms. They are also becoming increasingly interesting for applications such as hard coatings, x-ray optical elements, in microelectromechanical Systems (MEMS), and in magnetic recording media and heads.In this article, we review some of the interesting structures and mechanical properties that have been observed in nanometer-scale artificial multilayer structures.Superlattice thin films are readily deposited by vapor-phase techniques such as sputter deposition, evaporation, and chemical vapor deposition, as well as by electrochemical deposition. Superlattice deposition Systems are similar to conventional film deposition Systems, except for the provision to modulate the fluxes and thereby produce alternating super-lattice layers.


MRS Bulletin ◽  
1997 ◽  
Vol 22 (8) ◽  
pp. 22-26 ◽  
Author(s):  
Edward T. Yu

As characteristic dimensions in semiconductor devices continue to shrink and as advanced heterostructure devices increase in prominence, the ability to characterize structure and electronic properties in semiconductor materials and device structures at the atomic to nanometer scales has come to be of outstanding and immediate importance. Phenomena such as atomic-scale roughness of heterojunction interfaces, compositional ordering in semiconductor alloys, discreteness and spatial distribution of dopant atoms, and formation of self-assembled nanoscale structures can exert a profound influence on material properties and device behavior. The relationships between atomic-scale structure, epitaxial growth or processing conditions, and ultimately material properties and device behavior must be understood for realization and effective optimization of a wide range of semiconductor heterostructure and nanoscale devices.Cross-sectional scanning tunneling microscopy (STM) has emerged as a unique and powerful tool in the study of atomic-scale properties in III-V compound semiconductor heterostructures and of nanometer-scale structure and electronic properties in Si micro-electronic devices, offering unique capabilities for characterization that in conjunction with a variety of other, complementary experimental methods are providing new and important insights into material and device properties at the atomic to nanometer scale. In this article, we describe the basic experimental techniques involved in cross-sectional STM and give a few representative applications from our work that illustrate the ability, using cross-sectional STM in conjunction with other experimental techniques, to probe atomic-scale features in the structure of semiconductor heterojunctions and to correlate these features with epitaxial-growth conditions and device behavior.


2016 ◽  
Vol 7 (7) ◽  
pp. 3978-3991 ◽  
Author(s):  
Bing Ni ◽  
Xun Wang

Ultrathin materials at a sub-nanometer scale not only feature atomic scale size, but also possess unprecedented properties compared to conventional nanomaterials.


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