Optical emission spectroscopy and time-of-flight investigations of plasmas generated from AlN targets in cases of pulsed laser deposition with sub-ps and ns ultraviolet laser pulses

2003 ◽  
Vol 93 (4) ◽  
pp. 2244-2250 ◽  
Author(s):  
Carmen Ristoscu ◽  
Ion N. Mihailescu ◽  
Michalis Velegrakis ◽  
Maria Massaouti ◽  
Argyro Klini ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Time Of Flight ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Laser Pulses ◽  
Laser Deposition ◽  
Ultraviolet Laser

Optical emission spectroscopy in pulsed laser deposition of silicon

Vacuum ◽  
2013 ◽  
Vol 90 ◽  
pp. 151-154 ◽  
Author(s):  
Chen Hon Nee ◽  
Seong Shan Yap ◽  
Wee Ong Siew ◽  
Turid Worren Reenaas ◽  
Teck Yong Tou
Keyword(s):  
Pulsed Laser Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Laser Deposition

In-situ plasma monitoring by optical emission spectroscopy during pulsed laser deposition of doped Lu2O3

2021 ◽  
Vol 127 (10) ◽  
Author(s):  
S. Irimiciuc ◽  
J. More-Chevalier ◽  
S. Chertpalov ◽  
L. Fekete ◽  
M. Novotný ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Laser Deposition ◽  
Plasma Monitoring

scholarly journals Dynamics of Transient Plasmas Generated by ns Laser Ablation of Memory Shape Alloys

2020 ◽  
Author(s):  
Stefan Andrei Irimiciuc ◽  
Norina Forna ◽  
Andrei Agop ◽  
Maricel Agop ◽  
Stefan Toma ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Emission Spectroscopy ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Laser Deposition ◽  
Global Dynamics ◽  
Time Resolved ◽  
Laser Ablation Process ◽  
Key Techniques

Understanding the underline fundamental mechanism behind experimental and industrial technologies embodies one of the foundations of the advances and tailoring new materials. With the pulsed laser deposition being one of the key techniques for obtaining complex biocompatible materials with controllable stoichiometry, there is need for experimental and theoretical advancements towards understanding the dynamics of multi component plasmas. Here we investigate the laser ablation process on Cu-Mn-Al and Fe-Mn-Si by means of space-and time-resolved optical emission spectroscopy and fast camera imaging. In a fractal paradigm the space–time homographic transformations were correlated with the global dynamics of the ablation plasmas.

Femtosecond pulsed laser deposition of diamond-like carbon films: The effect of double laser pulses

2006 ◽  
Vol 252 (13) ◽  
pp. 4667-4671 ◽  
Author(s):  
Nikoletta Jegenyes ◽  
Zsolt Toth ◽  
Bela Hopp ◽  
Jozsef Klebniczki ◽  
Zsolt Bor ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Carbon Films ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Femtosecond Pulsed Laser

Growth and Characterization of Urea Doped p-Type ZnO Thin Film Grown by Pulsed Laser Deposition

2009 ◽  
Vol 67 ◽  
pp. 127-130 ◽  
Author(s):  
Majumdar Sayanee ◽  
Banerji Pallab
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Deposition ◽  
Zno Films ◽  
Group V ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
P Type

In the present study we have used urea as the source for doping nitrogen in ZnO since the most successful acceptor type dopant is the group V element like nitrogen. The nitrogen doped ZnO films have been deposited on glass substrates using Pulsed Laser Deposition technique using 248 nm KrF laser at energy 300 mJ by varying the number of laser pulses with a repetition rate of 10 pulse/sec in vacuum (10-6 mbar) at a constant temperature of 300 °C. The XRD pattern confirms the formation of wurtzite structure of ZnO, which is polycrystalline in nature. We have also performed UV absorption spectroscopy and the band gap is found to be 3.4 eV. Resistivity of the film increases with the increase of thickness for the undoped ZnO samples where the carrier concentrations are found to be of the order of 1017 cm-3. The mobility of the as-grown film is found to be 24.9 cm2/V-s. After doping with nitrogen the carrier concentration drops to the order of 1015 cm-3 and the mobility becomes 1.5 cm2/V-s. The mobility slightly varies with thickness. The resistivity increases to 1.3 KΩ-cm and the film shows p-type behavior. The results are explained on the basis of the available theory.

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