Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells

2003 ◽  
Vol 93 (4) ◽  
pp. 2051-2054 ◽  
Author(s):  
SF. Chichibu ◽  
T. Onuma ◽  
T. Sota ◽  
S. P. DenBaars ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Mole Fraction ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Processes ◽  
Localized Excitons

Radiative recombination processes of the many-body states in multiple quantum wells

1990 ◽  
Vol 42 (5) ◽  
pp. 2893-2903 ◽  
Author(s):  
R. Cingolani ◽  
K. Ploog ◽  
A. Cingolani ◽  
C. Moro ◽  
M. Ferrara
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Many Body ◽  
Recombination Processes ◽  
The Many

The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire

Nano Energy ◽  
2021 ◽  
pp. 106145
Author(s):  
Xianshao Zou ◽  
Jianqi Dong ◽  
Kang Zhang ◽  
Weihua Lin ◽  
Meiyuan Guo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Recombination ◽  
Piezotronic Effect ◽  
Recombination Processes

Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells

1997 ◽  
Vol 55 (4) ◽  
pp. R1938-R1941 ◽  
Author(s):  
Yukio Narukawa ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita ◽  
Shuji Nakamura
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Localized Excitons ◽  
Recombination Dynamics
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