scholarly journals Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

2002 ◽  
Vol 81 (26) ◽  
pp. 4970-4972 ◽  
Author(s):  
M. A. Reshchikov ◽  
H. Morkoç ◽  
S. S. Park ◽  
K. Y. Lee
Keyword(s):  
Photoluminescence Study ◽  
Charge States ◽  
Dominant Acceptor

Persistent Photoinduced Changes in Charge States of Donors and Acceptors in Hydrothermally Grown ZnO

2006 ◽  
Vol 957 ◽  
Author(s):  
Nancy C. Giles ◽  
Yongquan Jiang ◽  
Xiaocheng Yang ◽  
S. M. Evans ◽  
L. E. Halliburton
Keyword(s):  
Charge Trapping ◽  
Paramagnetic Resonance ◽  
Group Iii ◽  
Device Structures ◽  
State Changes ◽  
Charge States ◽  
The Stability ◽  
Photoinduced Changes ◽  
Electron Paramagnetic ◽  
Dominant Acceptor

ABSTRACTBulk ZnO grown by the hydrothermal technique was investigated using electron paramagnetic resonance (EPR), photoluminescence (PL), and infrared absorption (FTIR) techniques. Isolated subsitutional lithium is the dominant acceptor and could be detected using EPR or PL. A large concentration of neutral Li+-OH− centers were observed using FTIR data. EPR spectra assigned to Mn, Co, Ni, Fe, and Group III (Al, Ga) donors were also observed. Photoinduced changes in the charge states of the different deep and shallow centers were produced using 325 nm light, and the stability of these changes were monitored with EPR during pulsed thermal anneals. The charge-state changes for some defects were persistent and remained up to 300 K. These impurities, when present in device structures, may act as stable charge trapping sites.

Sensing of dynamic charge states using single-electron tunneling transistors

1998 ◽  
Vol 168 (2) ◽  
pp. 219
Author(s):  
V.A. Krupenin ◽  
S.V. Lotkhov ◽  
H. Scherer ◽  
A.B. Zorin ◽  
F.-J. Ahlers ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Dynamic Charge ◽  
Charge States

scholarly journals High-resolution spectroscopic study of hot electron induced copper M-shell charge states emission from laser produced plasmas

2019 ◽  
Vol 32 ◽  
pp. 89-95 ◽  
Author(s):  
F.P. Condamine ◽  
E. Filippov ◽  
P. Angelo ◽  
S.A. Pikuz ◽  
O. Renner ◽  
...  
Keyword(s):  
High Resolution ◽  
Spectroscopic Study ◽  
Hot Electron ◽  
Charge States

scholarly journals Detailed photoluminescence study of Cu2Ge(SSe)3 microcrystals

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085105
Author(s):  
J. Krustok ◽  
R. Kaupmees ◽  
X. Li ◽  
M. Kauk-Kuusik ◽  
M. Grossberg
Keyword(s):  
Photoluminescence Study

scholarly journals Energy deposition by nonequilibrium charge states of MeV I127 in Au

2021 ◽  
Vol 103 (2) ◽  
Author(s):  
Petter Ström ◽  
Daniel Primetzhofer
Keyword(s):  
Energy Deposition ◽  
Charge States

Photoluminescence study of Pr3+ doped CaGa2S4 in wide excitation intensity and temperature range

2021 ◽  
Vol 129 (24) ◽  
pp. 243104
Author(s):  
M. S. Leanenia ◽  
E. V. Lutsenko ◽  
M. V. Rzheutski ◽  
G. P. Yablonskii ◽  
T. G. Naghiyev ◽  
...  
Keyword(s):  
Excitation Intensity ◽  
Photoluminescence Study ◽  
Temperature Range

scholarly journals Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires

2018 ◽  
Vol 13 (1) ◽  
Author(s):  
A. S. Dahiya ◽  
S. Boubenia ◽  
G. Franzo ◽  
G. Poulin-Vittrant ◽  
S. Mirabella ◽  
...  
Keyword(s):  
Ammonium Hydroxide ◽  
Zno Nanowires ◽  
Photoluminescence Study

scholarly journals Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Ching-Hsiu Chen ◽  
Assamen Ayalew Ejigu ◽  
Liang-Chiun Chao
Keyword(s):  
Electrode Materials ◽  
Variable Temperature ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Flow Rates ◽  
Vacancy Defects ◽  
Photoluminescence Study ◽  
P Type ◽  
Quartz Substrates ◽  
Ion Beam Sputter Deposition

Cu2O has been deposited on quartz substrates by reactive ion beam sputter deposition. Experimental results show that by controlling argon/oxygen flow rates, both n-type and p-type Cu2O samples can be achieved. The bandgap of n-type and p-type Cu2O were found to be 2.3 and 2.5 eV, respectively. The variable temperature photoluminescence study shows that the n-type conductivity is due to the presence of oxygen vacancy defects. Both samples show stable photocurrent response that photocurrent change of both samples after 1,000 seconds of operation is less than 5%. Carrier densities were found to be 1.90 × 1018 and 2.24 × 1016 cm−3 for n-type and p-type Cu2O, respectively. Fermi energies have been calculated, and simplified band structures are constructed. Our results show that Cu2O is a plausible candidate for both photoanodic and photocathodic electrode materials in photoelectrochemical application.

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