Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates

2003 ◽  
Vol 93 (2) ◽  
pp. 1311-1319 ◽  
Author(s):  
M. Sumiya ◽  
N. Ogusu ◽  
Y. Yotsuda ◽  
M. Itoh ◽  
S. Fuke ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layers ◽  
Systematic Analysis ◽  
Sapphire Substrates ◽  
And Control

Nitrogen Plasma Pretreatment of Sapphire Substrates for the GaN Buffer Growth by Remote Plasma Enhanced MOCVD

1996 ◽  
Vol 449 ◽  
Author(s):  
Min Hong Kim ◽  
Cheolsoo Sone ◽  
Jae Hyung Yi ◽  
Soun Ok Heur ◽  
Euijoon Yoon
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Nitrogen Plasma ◽  
Layer Growth ◽  
Buffer Layers ◽  
Rf Power ◽  
Remote Plasma ◽  
Sapphire Substrates ◽  
Nucleation Sites ◽  
Plasma Pretreatment

ABSTRACTLow-temperature GaN buffer layers with smooth surfaces and high crystallinity could be prepared by a remote plasma enhanced metalorganic vapor deposition after the pretreatment of substrates with rf nitrogen plasma. Smooth AIN thin layer was formed on the (0001) sapphire substrate by the nitrogen plasma pretreatment for an hour. The AIN layer provided the nucleation sites for the subsequent buffer layer growth, thus highly preferred (0001) GaN buffer layers could be grown on the pretreated substrate. Formation of the AIN layer on sapphire and the surface smoothness were affected by pretreatment parameters such as exposure time, temperature, and rf power.

Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE

2004 ◽  
Vol 831 ◽  
Author(s):  
Daisuke Muto ◽  
Ryotaro Yoneda ◽  
Hiroyuki Naoi ◽  
Masahito Kurouchi ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Buffer Layers ◽  
Crystalline Quality ◽  
Constant Independent ◽  
Nitrogen Flux ◽  
Sapphire Substrates ◽  
Nitridation Process ◽  
Flux Modulation

ABSTRACTThe effects of the nitridation process of (0001) sapphire on crystalline quality of InN were clearly demonstrated. The InN films were grown on NFM (nitrogen flux modulation) HT-InN or LT-InN buffer layers, which had been deposited on nitridated sapphire substrates. We found that low-temperature nitridation of sapphire is effective in improving the tilt distribution of InN films. Whereas the twist distribution remained narrow and almost constant, independent of nitridation conditions, when LT-InN buffer layers were used. The XRC-FWHM value of 54 arcsec for (0002) InN, the lowest reported to date, was achieved by using the LT-InN buffer layer and sapphire nitridation at 300°C for 3 hours.

Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers

2002 ◽  
Vol 237-239 ◽  
pp. 1133-1138 ◽  
Author(s):  
M. Tabuchi ◽  
H. Kyouzu ◽  
Y. Takeda ◽  
S. Yamaguchi ◽  
H. Amano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Scale ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Scale Characterization ◽  
Aln Buffer

scholarly journals Prevalence, awareness, treatment, and control of hypertension in Nigeria in 1995 and 2020: A systematic analysis of current evidence

2021 ◽  
Author(s):  
Davies Adeloye ◽  
Eyitayo O. Owolabi ◽  
Dike B. Ojji ◽  
Asa Auta ◽  
Mary T. Dewan ◽  
...  
Keyword(s):  
Current Evidence ◽  
Systematic Analysis ◽  
And Control

Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layers

2013 ◽  
Vol 364 ◽  
pp. 30-33 ◽  
Author(s):  
Norihiro Suzuki ◽  
Kentaro Kaneko ◽  
Shizuo Fujita
Keyword(s):  
Thin Films ◽  
Buffer Layers ◽  
Sapphire Substrates

Short-period (Si14 / Si0.75 Ge0.25)20 Superlattices for the Growth of High-quality Si0.75 Ge0.25

2003 ◽  
Vol 765 ◽  
Author(s):  
M.M. Rahman ◽  
T. Tambo ◽  
C. Tatsuyama
Keyword(s):  
Low Temperature ◽  
Alloy Layer ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Strained Layers ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Defect Sites ◽  
Short Period ◽  
Different Temperatures

AbstractIn the present experiment, we have grown 2500-Å thick Si0.75Ge0.25 alloy layers on Si(001) substrate by MBE process using a short-period (Si14/Si0.75Ge0.25)20 superlattice (SL) as buffer layers. In the SL layers, first a layer of 14 monolayers (MLs) of Si (thickness about 20Å) then a thin layer of Si0.75Ge0.25 (thickness 5-6Å) were grown. This Si/(Si0.75Ge0.25) bilayers were repeated for 20 times. The buffer layers were grown at different temperatures from 300-400°C and the alloy layers were then grown at 500°C on the buffer layers. The alloy layer showed low residual strain (about -0.16%) and smooth surface (rms roughness ~15Å) with 300°C grown SL buffer. Low temperature growth of Si in SL layer introduces point defects and low temperature growth of Si1-xGex in SL layer reduces the Ge segregation length, which leads to strained SL layer formation. Strained layers are capable to make barrier for the propagation of threading dislocations and point defect sites can trap the dislocations.

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