Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

2002 ◽  
Vol 81 (23) ◽  
pp. 4392-4394 ◽  
Author(s):  
J. P. Zhang ◽  
M. Asif Khan ◽  
W. H. Sun ◽  
H. M. Wang ◽  
C. Q. Chen ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Deep Ultraviolet ◽  
Ultraviolet Emissions ◽  
Pulsed Atomic Layer Epitaxy

Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy

2011 ◽  
Vol 257 (20) ◽  
pp. 8718-8721 ◽  
Author(s):  
Xu Pan ◽  
Xiaoliang Wang ◽  
Hongling Xiao ◽  
Cuimei Wang ◽  
Cuibai Yang ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Al Content ◽  
Pulsed Atomic Layer Epitaxy ◽  
High Al Content

High quality AlN films grown by pulsed atomic-layer epitaxy

2008 ◽  
Author(s):  
Hu Wang ◽  
Ruofei Xiang ◽  
Qiang Zhang ◽  
Jiangnan Dai ◽  
Qinghua He ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Pulsed Atomic Layer Epitaxy

Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1037 ◽  
Author(s):  
Mohd Nazri Abd Rahman ◽  
Abdullah Fadil Sulaiman ◽  
Muhammad I. M. Abdul Khudus ◽  
Kamarul Allif ◽  
Noor Azrina Talik ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Organic Chemical ◽  
Cycle Number ◽  
Pulse Cycle ◽  
Metal Organic ◽  
Pulsed Atomic Layer Epitaxy ◽  
Organic Chemical Vapor Deposition

Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD

2021 ◽  
Vol 50 (4) ◽  
pp. 2313-2322
Author(s):  
Mohd Nazri Abd Rahman ◽  
Ahmad Shuhaimi ◽  
Muhammad I. M. Abdul Khudus ◽  
Afiq Anuar ◽  
Mohamed Zulhakim Zainorin ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Aluminium Nitride ◽  
Atomic Layer Epitaxy ◽  
Oxygen Incorporation ◽  
Standard Pressure ◽  
Pulsed Atomic Layer Epitaxy

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters

2001 ◽  
Vol 188 (1) ◽  
pp. 95-99 ◽  
Author(s):  
J.P. Zhang ◽  
E. Kuokstis ◽  
Q. Fareed ◽  
H.M. Wang ◽  
J.W. Yang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Light Emitters ◽  
Pulsed Atomic Layer Epitaxy

Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

2005 ◽  
Vol 87 (21) ◽  
pp. 211915 ◽  
Author(s):  
W. H. Sun ◽  
J. P. Zhang ◽  
J. W. Yang ◽  
H. P. Maruska ◽  
M. Asif Khan ◽  
...  
Keyword(s):  
Fine Structure ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Pulsed Atomic Layer Epitaxy

Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD

CrystEngComm ◽  
2019 ◽  
Vol 21 (12) ◽  
pp. 2009-2017 ◽  
Author(s):  
Mohd Nazri Abd Rahman ◽  
Noor Azrina Talik ◽  
Muhammad I. M. Abdul Khudus ◽  
Abdullah Fadil Sulaiman ◽  
Kamarul Allif ◽  
...  
Keyword(s):  
Flux Density ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Crystalline ◽  
Sapphire Substrates ◽  
Pulsed Atomic Layer Epitaxy ◽  
Ammonia Flux

A smooth and dense single-crystalline AlN was successfully grown by tailoring the flux density of ammonia.

High quality a -plane GaN layers grown by pulsed atomic-layer epitaxy on r -plane sapphire substrates

2008 ◽  
Author(s):  
Jiangnan Dai ◽  
Zhihao Wu ◽  
Xiangyun Han ◽  
Qinghua He ◽  
Yuqing Sun ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Sapphire Substrates ◽  
Pulsed Atomic Layer Epitaxy
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