High quality a -plane GaN layers grown by pulsed atomic-layer epitaxy on r -plane sapphire substrates

2008 ◽  
Author(s):  
Jiangnan Dai ◽  
Zhihao Wu ◽  
Xiangyun Han ◽  
Qinghua He ◽  
Yuqing Sun ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Sapphire Substrates ◽  
Pulsed Atomic Layer Epitaxy

High quality AlN films grown by pulsed atomic-layer epitaxy

2008 ◽  
Author(s):  
Hu Wang ◽  
Ruofei Xiang ◽  
Qiang Zhang ◽  
Jiangnan Dai ◽  
Qinghua He ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Pulsed Atomic Layer Epitaxy

Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD

CrystEngComm ◽  
2019 ◽  
Vol 21 (12) ◽  
pp. 2009-2017 ◽  
Author(s):  
Mohd Nazri Abd Rahman ◽  
Noor Azrina Talik ◽  
Muhammad I. M. Abdul Khudus ◽  
Abdullah Fadil Sulaiman ◽  
Kamarul Allif ◽  
...  
Keyword(s):  
Flux Density ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Crystalline ◽  
Sapphire Substrates ◽  
Pulsed Atomic Layer Epitaxy ◽  
Ammonia Flux

A smooth and dense single-crystalline AlN was successfully grown by tailoring the flux density of ammonia.

The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
S. P. Denbaars ◽  
A. Hariz ◽  
C. Beyler ◽  
B. Y. Maa ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Monolayer Growth ◽  
Low Threshold ◽  
Kinetics Of

ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy

2011 ◽  
Vol 257 (20) ◽  
pp. 8718-8721 ◽  
Author(s):  
Xu Pan ◽  
Xiaoliang Wang ◽  
Hongling Xiao ◽  
Cuimei Wang ◽  
Cuibai Yang ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Al Content ◽  
Pulsed Atomic Layer Epitaxy ◽  
High Al Content

Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1037 ◽  
Author(s):  
Mohd Nazri Abd Rahman ◽  
Abdullah Fadil Sulaiman ◽  
Muhammad I. M. Abdul Khudus ◽  
Kamarul Allif ◽  
Noor Azrina Talik ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Organic Chemical ◽  
Cycle Number ◽  
Pulse Cycle ◽  
Metal Organic ◽  
Pulsed Atomic Layer Epitaxy ◽  
Organic Chemical Vapor Deposition

Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD

2021 ◽  
Vol 50 (4) ◽  
pp. 2313-2322
Author(s):  
Mohd Nazri Abd Rahman ◽  
Ahmad Shuhaimi ◽  
Muhammad I. M. Abdul Khudus ◽  
Afiq Anuar ◽  
Mohamed Zulhakim Zainorin ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Aluminium Nitride ◽  
Atomic Layer Epitaxy ◽  
Oxygen Incorporation ◽  
Standard Pressure ◽  
Pulsed Atomic Layer Epitaxy

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters

2001 ◽  
Vol 188 (1) ◽  
pp. 95-99 ◽  
Author(s):  
J.P. Zhang ◽  
E. Kuokstis ◽  
Q. Fareed ◽  
H.M. Wang ◽  
J.W. Yang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Light Emitters ◽  
Pulsed Atomic Layer Epitaxy

Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

2005 ◽  
Vol 87 (21) ◽  
pp. 211915 ◽  
Author(s):  
W. H. Sun ◽  
J. P. Zhang ◽  
J. W. Yang ◽  
H. P. Maruska ◽  
M. Asif Khan ◽  
...  
Keyword(s):  
Fine Structure ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Pulsed Atomic Layer Epitaxy
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