Ion flux uniformity in inductively coupled plasma sources

2002 ◽  
Vol 9 (11) ◽  
pp. 4767-4775 ◽  
Author(s):  
Igor Denysenko ◽  
Stanislav Dudin ◽  
Aleksander Zykov ◽  
Nikolay Azarenkov ◽  
M. Y. Yu
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Flux ◽  
Plasma Sources ◽  
Inductively Coupled

Low Bias Dry Etching of Sic and Sicn in ICP NF3 Discharges

1998 ◽  
Vol 512 ◽  
Author(s):  
J. J. Wang ◽  
Hyun Cho ◽  
E. S. Lambers ◽  
S. J. Peartont ◽  
M. Ostling ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Flux ◽  
Pattern Transfer ◽  
Plasma Composition ◽  
Source Power ◽  
Ion Energy ◽  
Trade Off ◽  
Inductively Coupled ◽  
Extensive Surface ◽  
Etch Rates

ABSTRACTA parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.8N0.2 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power reaching 3500Å·min−1 for SiC and 7500 Å·min−1 for SiCN. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tinoxide( ITO) masks display relatively good etch selectivity over SiC(maximum of 70:1) while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. The high ion flux available in the ICP tool allows etching even at very low dc self-biases, ≤ −10V, leading to very low damage pattern transfer.

Nonlinear enhancement of plasma density in linear combination of multiple collisional internal inductively coupled plasma sources

2010 ◽  
Vol 17 (10) ◽  
pp. 103503 ◽  
Author(s):  
Zhipeng Chen ◽  
Hong Li ◽  
Bin Li ◽  
Chen Luo ◽  
Jinlin Xie ◽  
...  
Keyword(s):  
Linear Combination ◽  
Plasma Density ◽  
Inductively Coupled Plasma ◽  
Plasma Sources ◽  
Inductively Coupled

The electronic identity of inductive and capacitive plasmas

2008 ◽  
Vol 74 (2) ◽  
pp. 155-161 ◽  
Author(s):  
K. T. A. L. BURM
Keyword(s):  
Inductively Coupled Plasma ◽  
Optimal Operation ◽  
Identity Relation ◽  
Inductively Coupled Plasmas ◽  
Plasma Sources ◽  
Capacitively Coupled ◽  
Inductively Coupled ◽  
Capacitively Coupled Plasma ◽  
Coupled Plasmas ◽  
Operation Frequency

AbstractAn electronic identity relation, relating capacitively coupled plasma sources to corresponding inductively coupled plasma sources, has been derived, starting from the Maxwell relations for matter and the characteristics of a capacitor and of an inductor. Furthermore, the breakdown conditions for both capacitively coupled plasmas and for inductively coupled plasmas as well as their optimal operation frequency ranges are discussed.

The effect of dielectric top lids on materials processing in a low frequency inductively coupled plasma (LF-ICP) reactor

2014 ◽  
Vol 32 ◽  
pp. 1460340
Author(s):  
J. W. M. Lim ◽  
C. S. Chan ◽  
L. Xu ◽  
S. Xu
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Plasma Reactor ◽  
High Vacuum ◽  
Low Frequency ◽  
Optical Emission ◽  
Good Alternative ◽  
Plasma Sources ◽  
Inductively Coupled ◽  
Glass Substrates

The advent of the plasma revolution began in the 1970's with the exploitation of plasma sources for anisotropic etching and processing of materials. In recent years, plasma processing has gained popularity, with research institutions adopting projects in the field and industries implementing dry processing in their production lines. The advantages of utilizing plasma sources would be uniform processing over a large exposed surface area, and the reduction of toxic emissions. This leads to reduced costs borne by manufacturers which could be passed down as consumer savings, and a reduction in negative environmental impacts. Yet, one constraint that plagues the industry would be the control of contaminants in a plasma reactor which becomes evident when reactions are conducted in a clean vacuum environment. In this work, amorphous silicon (a-Si) thin films were grown on glass substrates in a low frequency inductively coupled plasma (LF-ICP) reactor with a top lid made of quartz. Even though the chamber was kept at high vacuum (~10−4 Pa), it was evident through secondary ion mass spectroscopy (SIMS) and Fourier-transform infra-red spectroscopy (FTIR) that oxygen contaminants were present. With the aid of optical emission spectroscopy (OES) the contaminant species were identified. The design of the LF-ICP reactor was then modified to incorporate an Alumina ( Al2O3 ) lid. Results indicate that there were reduced amounts of contaminants present in the reactor, and that an added benefit of increased power transfer to the plasma, improving deposition rate of thin films was realized. The results of this study is conclusive in showing that Al2O3 is a good alternative as a top-lid of an LF-ICP reactor, and offers industries a solution in improving quality and rate of growth of thin films.

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