Stimulated emission due to the inelastic scattering from the heavy-hole exciton to the light-hole exciton in CuI thin films

2002 ◽  
Vol 92 (7) ◽  
pp. 3511-3516 ◽  
Author(s):  
I. Tanaka ◽  
M. Nakayama
Keyword(s):  
Thin Films ◽  
Inelastic Scattering ◽  
Heavy Hole ◽  
Light Hole ◽  
Stimulated Emission

Strain-induced splitting of the heavy-hole- and light-hole-exciton energies in NaI thin films

1998 ◽  
Vol 57 (4) ◽  
pp. 2592-2595 ◽  
Author(s):  
H. Nishimura ◽  
K. Kitano ◽  
S. Kawase ◽  
M. Nakayama
Keyword(s):  
Thin Films ◽  
Heavy Hole ◽  
Light Hole

Photoluminescence from heavy-hole and light-hole excitons split by thermal strain in CuI thin films

2000 ◽  
Vol 87-89 ◽  
pp. 257-259 ◽  
Author(s):  
I Tanaka ◽  
D Kim ◽  
M Nakayama ◽  
H Nishimura
Keyword(s):  
Thin Films ◽  
Heavy Hole ◽  
Thermal Strain ◽  
Light Hole

Quantum beats between heavy-hole and light-hole excitons in CuI thin films

2001 ◽  
Vol 94-95 ◽  
pp. 385-388 ◽  
Author(s):  
I. Tanaka ◽  
K. Mizoguchi ◽  
M. Nakayama
Keyword(s):  
Thin Films ◽  
Heavy Hole ◽  
Light Hole ◽  
Quantum Beats

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Exciton binding energies in GaAs films on AlxGa1−xAs substrates

2015 ◽  
Vol 29 (30) ◽  
pp. 1550213 ◽  
Author(s):  
Zhenhua Wu ◽  
Lei Chen ◽  
Qiang Tian
Keyword(s):  
Film Thickness ◽  
Significant Influence ◽  
Heavy Hole ◽  
Dimensional Space ◽  
Light Hole ◽  
Binding Energies ◽  
Substrate Thickness ◽  
Dimensional Approach ◽  
Anisotropic System ◽  
Gaas Films

We use the fractional–dimensional approach (FDA) to study exciton binding energies in GaAs films on [Formula: see text] substrates. In this approach, the Schrödinger equation for a given anisotropic system is solved in a noninteger-dimensional space where the interactions are assumed to occur in an isotropic effective environment. The heavy-hole and light-hole exciton binding energies are calculated as functions of the film thickness and substrate thickness. The numerical results show that both the heavy-hole and light-hole exciton binding energies decrease monotonously as the film thickness increases. When the film thickness and the substrate thickness is relatively small, the change of substrate thickness has comparatively remarkable influence on both heavy-hole and light-hole exciton binding energies. As the substrate thickness increases, both the heavy-hole and light-hole exciton binding energies increase gradually. When the film thickness or the substrate thickness is relatively large, the change of substrate thickness has no significant influence on both heavy-hole and light-hole exciton binding energies.

Low-Threshold Stimulated Emission in ZnO Thin Films Grown by Atomic Layer Deposition

2008 ◽  
Vol 14 (4) ◽  
pp. 1053-1057 ◽  
Author(s):  
Hsing-Chao Chen ◽  
Miin-Jang Chen ◽  
Mong-Kai Wu ◽  
Yung-Chen Cheng ◽  
Feng-Yu Tsai
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Stimulated Emission ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Low Threshold

scholarly journals Probing the light hole/heavy hole switching with correlated magneto-optical spectroscopy and chemical analysis on a single quantum dot

2019 ◽  
Vol 30 (17) ◽  
pp. 175301
Author(s):  
A Artioli ◽  
P Rueda-Fonseca ◽  
K Moratis ◽  
J F Motte ◽  
F Donatini ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Quantum Dot ◽  
Optical Spectroscopy ◽  
Heavy Hole ◽  
Light Hole ◽  
Single Quantum ◽  
Single Quantum Dot
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