Monomode, nonleaky planar waveguides in a Nd3+-doped silicate glass produced by silicon ion implantation at low doses

2002 ◽  
Vol 92 (6) ◽  
pp. 2959-2961 ◽  
Author(s):  
Feng Chen ◽  
Ke-Ming Wang ◽  
Xue-Lin Wang ◽  
Xi-Shan Li ◽  
Qing-Ming Lu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicate Glass ◽  
Planar Waveguides ◽  
Low Doses

Low-loss optical planar waveguides in YVO4 produced by silicon ion implantation at low doses

2003 ◽  
Vol 94 (7) ◽  
pp. 4708-4710 ◽  
Author(s):  
Feng Chen ◽  
Xue-Lin Wang ◽  
Shi-Ling Li ◽  
Gang Fu ◽  
Ke-Ming Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Planar Waveguides ◽  
Low Doses ◽  
Low Loss ◽  
Optical Planar Waveguides

Near-infrared Properties of Optical Planar Waveguides Formed by H+ Ion Implantation in Yb3+-doped Phosphate Glasses

2020 ◽  
Vol 49 (4) ◽  
pp. 423001-423001
Author(s):  
吕婧妍 Jing-yan Lü ◽  
郭海涛 Hai-tao GUO ◽  
徐君 Jun XU ◽  
刘春晓 Chun-xiao LIU
Keyword(s):  
Ion Implantation ◽  
Near Infrared ◽  
Phosphate Glasses ◽  
Planar Waveguides ◽  
Optical Planar Waveguides

Optical planar waveguides in photo-thermal-refractive glasses fabricated by single- or double-energy carbon ion implantation

2018 ◽  
Vol 57 (01) ◽  
pp. 1 ◽  
Author(s):  
Yue Wang ◽  
Xiao-Liang Shen ◽  
Rui-Lin Zheng ◽  
Hai-Tao Guo ◽  
Peng Lv ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Planar Waveguides ◽  
Carbon Ion ◽  
Optical Planar Waveguides

Planar optical waveguide in potassium titanyl arsenate formed by oxygen ion implantation at low doses

2006 ◽  
Vol 88 (1) ◽  
pp. 011114 ◽  
Author(s):  
Yi Jiang ◽  
Ke-Ming Wang ◽  
Xue-Lin Wang ◽  
Chuan-Lei Jia ◽  
Lei Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Waveguide ◽  
Low Doses ◽  
Planar Optical Waveguide ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Planar waveguides in Ce:SBN and Cu:KNSBN crystals by 6.0 MeV B3+ ion implantation

2002 ◽  
Vol 202 (1-2) ◽  
pp. 86-91 ◽  
Author(s):  
Feng Chen ◽  
Xue-Lin Wang ◽  
Qing-Ming Lu ◽  
Gang Fu ◽  
Shi-Ling Li ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Planar Waveguides

Shallow Ion Implantation in Gallium Arsenide Mesfet Technology

1991 ◽  
Vol 240 ◽  
Author(s):  
J. P. de Souza ◽  
D. K. Sadana
Keyword(s):  
Gallium Arsenide ◽  
Ion Implantation ◽  
Electrical Activation ◽  
Low Doses ◽  
Layer Formation ◽  
Remarkable Improvement ◽  
Maximum Improvement ◽  
Activation Behavior ◽  
State Of Art ◽  
Ic Technology

ABSTRACTThis review emphasizes controlled shallow doping of GaAs by ion implantation for state-of-art GaAs IC technology. Electrical activation behavior of Si+ and SiF+ implanted GaAs after RTA under capless and PECVD Si3N4-capped conditions will be compared. It will be demonstrated that a remarkable improvement (> 20 %) both in carrier activation and as well mobility can be achieved by co-implanting low doses (< 1013 cm−2 of Al+ into n-dopant (including Si, Se and Te) implanted GaAs and subsequently annealing the material under capless RTA conditions. The maximum improvement in the electrical results with Al+ co-implants occurs for doses (e.g. < 1013 cm−2 for 30 keV Si+) which are used for fabricating shallow channels for submicron GaAs MESFETs. Complex dopant-annealing environment interactions during a buried p layer formation (using either Mg+ or Be+) will be discussed.

Planar optical waveguides in β-BaB2O4 produced by oxygen ion implantation at low doses

2004 ◽  
Vol 85 (9) ◽  
pp. 1457-1459 ◽  
Author(s):  
Xue-Lin Wang ◽  
Feng Chen ◽  
Ke-Ming Wang ◽  
Qing-Ming Lu ◽  
Ding-Yu Shen ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Waveguides ◽  
Low Doses ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
Planar Optical Waveguides
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