Low interface state density of SiC-based metal–oxide–semiconductor structure formed with perchloric acid at 203 °C

2002 ◽  
Vol 81 (2) ◽  
pp. 271-273 ◽  
Author(s):  
Takeaki Sakurai ◽  
Masayoshi Nishiyama ◽  
Yasushiro Nishioka ◽  
Hikaru Kobayashi
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