Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire
2016 ◽
Vol 456
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pp. 121-132
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1987 ◽
Vol 26
(Part 1, No. 7)
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pp. 1097-1101
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2004 ◽
Vol 22
(1)
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pp. 77
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Keyword(s):
1994 ◽
Vol 33
(Part 1, No. 4A)
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pp. 1747-1752
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