Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire

2002 ◽  
Vol 92 (2) ◽  
pp. 786-792 ◽  
Author(s):  
P. Laukkanen ◽  
S. Lehkonen ◽  
P. Uusimaa ◽  
M. Pessa ◽  
J. Oila ◽  
...  
2006 ◽  
Vol 99 (11) ◽  
pp. 116103 ◽  
Author(s):  
D. Y. Song ◽  
V. Kuryatkov ◽  
M. Basavaraj ◽  
D. Rosenbladt ◽  
S. A. Nikishin ◽  
...  

1987 ◽  
Vol 26 (Part 1, No. 7) ◽  
pp. 1097-1101 ◽  
Author(s):  
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Toshiaki Fukunaga ◽  
Junji Kobayashi ◽  
Koichi Ishida ◽  
Hisao Nakashima

2000 ◽  
Vol 77 (18) ◽  
pp. 2888-2890 ◽  
Author(s):  
M. J. Manfra ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
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...  

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