High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

2000 ◽  
Vol 77 (18) ◽  
pp. 2888-2890 ◽  
Author(s):  
M. J. Manfra ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
H. L. Stormer ◽  
K. W. Baldwin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Molecular Beam ◽  
High Mobility ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium

2015 ◽  
Vol 49 (3) ◽  
pp. 387-393 ◽  
Author(s):  
D. O. Filatov ◽  
A. P. Gorshkov ◽  
N. S. Volkova ◽  
D. V. Guseinov ◽  
N. A. Alyabina ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Molecular Beam ◽  
Vapor Phase Epitaxy ◽  
Self Assembled

scholarly journals Метод управления полярностью слоев GaN при эпитаксиальном синтезе GaN/AlN гетероструктур на гибридных подложках SiC/Si

2019 ◽  
Vol 61 (12) ◽  
pp. 2289
Author(s):  
А.М. Мизеров ◽  
С.А. Кукушкин ◽  
Ш.Ш. Шарофидинов ◽  
А.В. Осипов ◽  
С.Н. Тимошнев ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Transition Layer ◽  
Molecular Beam ◽  
Complete Removal ◽  
Complete Separation ◽  
Vapor Phase Epitaxy ◽  
Polarity Inversion ◽  
Second Stage ◽  
Thick Layers

The effect of GaN polarity inversion from N- to Ga-face during the successive growth of GaN layers by plasma assisted molecular beam epitaxy and halide vapor phase epitaxy on hybrid SiC/Si(111) substrates was found. A new method of the formation of crack-free Ga-face GaN/AlN heterostructures on hybrid SiC/Si(111) substrates has been developed. In this method the two stage growth of GaN layers is used. At the first stage, the N-face GaN transition layer was grown on the SiC/Si(111) surface by plasma assisted molecular beam epitaxy. At the second stage, the AlN interlayer was first grown by halide vapor phase epitaxy on N-face GaN transition layer. After that the Ga-face GaN layer was synthesized by halide vapor phase epitaxy atop of the AlN interlayer. Also it was found that etching in a KOH solution affects only the N-face GaN transition layer and leads to its complete removal, which result in complete separation of the main Ga-face GaN layer from the SiC/Si(111) substrate. The method allows you to grow free from cracks and unstressed thick layers of GaN, and transfer them to the foreign substrates.

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