scholarly journals Fourier imaging study of efficient near-field optical coupling in solid immersion fluorescence microscopy

2002 ◽  
Vol 92 (2) ◽  
pp. 862-865 ◽  
Author(s):  
Masahiro Yoshita ◽  
Kazuko Koyama ◽  
Motoyoshi Baba ◽  
Hidefumi Akiyama
2011 ◽  
Vol 1302 ◽  
Author(s):  
Leroy Magwood ◽  
Binil Starly

ABSTRACTWell-aligned, 1D CdSe quantum dot (QD) fibers (0.3μm to 2.5μm) containing up to 20wt% fluorescent quantum dots (QDs) were prepared by near-field electrospinning (NFES) process. Electrospun solutions were prepared using PVAc as the matrix polymer, dimethyl formamide (DMF) solvent and colloidal QDs in chloroform (CHCl3). The diameter of the fibers decreased as the ratio of DMF/CHCl3 is varied. QDs showed good dispersion and a linear relationship between QD loading and fiber diameter, as determined by the morphology measurements taken using TEM and SEM, respectively. Fluorescence microscopy shows that there is light attenuation throughout the fibers. Results also show that the NFES process may be used as a method to create aligned, 1D fibers of QDs and potentially other nanofibers.


1998 ◽  
Vol 71 (1-4) ◽  
pp. 303-309 ◽  
Author(s):  
Th. Enderle ◽  
T. Ha ◽  
D.S. Chemla ◽  
S. Weiss

1999 ◽  
Vol 82 (20) ◽  
pp. 4014-4017 ◽  
Author(s):  
Erik J. Sánchez ◽  
Lukas Novotny ◽  
X. Sunney Xie

2011 ◽  
Vol 19 (7) ◽  
pp. 6836 ◽  
Author(s):  
Thomas Ruckstuhl ◽  
Dorinel Verdes ◽  
Christian M. Winterflood ◽  
Stefan Seeger

Author(s):  
Zerihun Gedeb Tegegne ◽  
Carlos Viana ◽  
Marc D. Rosales ◽  
Julien Schiellein ◽  
Jean-Luc Polleux ◽  
...  

A 10 × 10 μm2SiGe heterojunction bipolar photo-transistor (HPT) is fabricated using a commercial technological process of 80 GHz SiGe bipolar transistors (HBT). Its technology and structure are first briefly described. Its optimal opto-microwave dynamic performance is then analyzed versus voltage biasing conditions for opto-microwave continuous wave measurements. The optimal biasing points are then chosen in order to maximize the optical transition frequency (fTopt) and the opto-microwave responsivity of the HPT. An opto-microwave scanning near-field optical microscopy (OM-SNOM) is performed using these optimum bias conditions to localize the region of the SiGe HPT with highest frequency response. The OM-SNOM results are key to extract the optical coupling of the probe to the HPT (of 32.3%) and thus the absolute responsivity of the HPT. The effect of the substrate is also observed as it limits the extraction of the intrinsic HPT performance. A maximum optical transition frequency of 4.12 GHz and an absolute low frequency opto-microwave responsivity of 0.805A/W are extracted at 850 nm.


2011 ◽  
Vol 110 (10) ◽  
pp. 104306 ◽  
Author(s):  
Yosuke Harada ◽  
Kohei Imura ◽  
Hiromi Okamoto ◽  
Yoshiaki Nishijima ◽  
Kosei Ueno ◽  
...  

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