scholarly journals Use of near-surface channel conductance and differential capacitance versus potential measurements to correlate inversion layer formation with low effective surface recombination velocities at n-Si/liquid contacts

2002 ◽  
Vol 80 (23) ◽  
pp. 4458-4460 ◽  
Author(s):  
David J. Michalak ◽  
Nathan S. Lewis
Keyword(s):  
Inversion Layer ◽  
Surface Recombination ◽  
Differential Capacitance ◽  
Layer Formation ◽  
Channel Conductance ◽  
Effective Surface ◽  
Near Surface

Simulation of A-SI Pin Solar Cells with Buffer

1993 ◽  
Vol 297 ◽  
Author(s):  
P.H Pfleiderer H
Keyword(s):  
Solar Cells ◽  
Space Charge ◽  
Numerical Simulations ◽  
Inversion Layer ◽  
Surface Recombination ◽  
Small Signal ◽  
Front Side ◽  
Dipole Layer ◽  
Field Peak ◽  
Typical Cell

The buffer of standard solar cells restricts the "surface recombination" at the front side. Some typical cell properties linked to the buffer are exposed by numerical simulations: The "blue snake" appearing in small-signal photocharacteristics, the electron inversion layer, the reverse field peak and the satellite space-charge dipole layer. It is possible to base a simulation on the roots of an algebraic equation.

scholarly journals Simulations of a cold-air pool associated with elevated wintertime ozone in the Uintah Basin, Utah

2014 ◽  
Vol 14 (11) ◽  
pp. 15953-16000 ◽  
Author(s):  
E. M. Neemann ◽  
E. T. Crosman ◽  
J. D. Horel ◽  
L. Avey
Keyword(s):  
Boundary Layer ◽  
Snow Cover ◽  
Layer Structure ◽  
Inversion Layer ◽  
Cloud Microphysics ◽  
Photochemical Reactions ◽  
Near Surface ◽  
Cold Air ◽  
Air Temperatures ◽  
Uintah Basin

Abstract. Numerical simulations are used to investigate the meteorological characteristics of the 1–6 February 2013 cold-air pool in the Uintah Basin, Utah, and the resulting high ozone concentrations. Flow features affecting cold-air pools and air quality in the Uintah Basin are studied, including: penetration of clean air into the basin from across the surrounding mountains, elevated easterlies within the inversion layer, and thermally-driven slope and valley flows. The sensitivity of the boundary layer structure to cloud microphysics and snow cover variations are also examined. Ice-dominant clouds enhance cold-air pool strength compared to liquid-dominant clouds by increasing nocturnal cooling and decreasing longwave cloud forcing. Snow cover increases boundary layer stability by enhancing the surface albedo, reducing the absorbed solar insolation at the surface, and lowering near-surface air temperatures. Snow cover also increases ozone levels by enhancing solar radiation available for photochemical reactions.

Conversion Tunneling in Non-Ideal Schottky Barriers: Virtual Resonance Manifestation and Interface States Influence

1996 ◽  
Vol 448 ◽  
Author(s):  
D.A. Romanov ◽  
A.V. Kalameitsev ◽  
A.P. Kovchavtsev ◽  
I.M. Subbotin
Keyword(s):  
Inversion Layer ◽  
Differential Resistance ◽  
Interface States ◽  
Tunnel Current ◽  
Semiconductor Interface ◽  
Near Surface ◽  
Electron States ◽  
Current Voltage ◽  
Transfer Matrix Approach ◽  
Mos Structures

AbstractWe have investigated experimentally and theoretically the elastic conversion tunneling of charge carriers in MOS structures Au on p+-InAs with superthin (10-20 Å) oxide film, the structures used in infrared photodetectors. In these structures the Schottky barrier provides near-surface inversion layer. The tunnel current-voltage (I-V) curves obtained at helium temperatures demonstrate the negative differential resistance region (NDR). We develop semiclassical two-band transfer matrix approach to the conversion tunneling analysis in a multilayer structure and calculate on its base the I-V curves dependence on the structure parameters. The NDR occurs to be caused by the motion of the remote quantum level in the inversion layer. The calculated I-V characteristics agree with the experimental ones quite well. The very existence of NDR and the shape of I-V curves depends strongly on the nature of localized electron states at the semiconductor interface. The characteristics of these electron states are used in the calculations as fitting parameters. Therefore, we suggest a new method for the interface states diagnosis.

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