Intraband relaxation time in wurtzite InGaN/GaN quantum-well structures with (101̄0) crystal orientation

2002 ◽  
Vol 80 (16) ◽  
pp. 2830-2832 ◽  
Author(s):  
Seoung-Hwan Park
Keyword(s):  
Relaxation Time ◽  
Quantum Well ◽  
Crystal Orientation ◽  
Quantum Well Structures ◽  
Intraband Relaxation

Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

2001 ◽  
Vol 79 (10) ◽  
pp. 1477-1479 ◽  
Author(s):  
Chii-Chang Chen ◽  
Kun-Long Hsieh ◽  
Jinn-Kong Sheu ◽  
Gou-Chung Chi ◽  
Ming-Juinn Jou ◽  
...  
Keyword(s):  
Quantum Well ◽  
Crystal Orientation ◽  
Multiple Quantum Well ◽  
Optical Gain ◽  
Orientation Dependence ◽  
Multiple Quantum ◽  
Quantum Well Structures

POPULATION RELAXATION TIME OF OPTICAL PHONONS IN GaAs-AlAs MULTIPLE QUANTUM WELL STRUCTURES

1993 ◽  
Vol 07 (13n14) ◽  
pp. 887-893 ◽  
Author(s):  
K.T. TSEN ◽  
C. CHIA ◽  
J. WEST ◽  
H. MORKOC
Keyword(s):  
Relaxation Time ◽  
Quantum Well ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Relaxation Times ◽  
Experimental Results ◽  
Multiple Quantum ◽  
Optical Phonons ◽  
Quantum Well Structures ◽  
Population Relaxation

Population relaxation time of confined as well as interface optical phonons in a series of GaAs-AlAs multiple quantum well structures has been measured by picosecond time-resolved Raman spectroscopy. Our experimental results have shown that (1) within the experimental accuracy, the population relaxation time of confined optical phonons in GaAs-AlAs multiple quantum well structures is independent of GaAs well-width and is given by 6±1 ps at T=10 K; (2) the population relaxation times of both GaAs -like and AlAs -like interface optical phonons increase as GaAs well-width increases from 20 Å to 100 Å. These experimental results are compared with theoretical calculations recently carried out by Gupta and Ridley (Ref. 3).

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