Hole-phonon relaxation time and Landau-level broadening due to hole-phonon interactions in multiple-quantum-well structures in the presence of a magnetic field and internal strains

1987 ◽  
Vol 36 (2) ◽  
pp. 1178-1185 ◽  
Author(s):  
M. Singh
Keyword(s):  
Magnetic Field ◽  
Relaxation Time ◽  
Quantum Well ◽  
Landau Level ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Phonon Relaxation Time ◽  
Internal Strains

Magnetic-Field-Induced Metal-Insulator Transitions in Multiple-Quantum-Well Structures

1995 ◽  
Vol 75 (5) ◽  
pp. 906-909 ◽  
Author(s):  
Y. J. Wang ◽  
B. D. McCombe ◽  
R. Meisels ◽  
F. Kuchar ◽  
W. Schaff
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Metal Insulator ◽  
Quantum Well Structures

POPULATION RELAXATION TIME OF OPTICAL PHONONS IN GaAs-AlAs MULTIPLE QUANTUM WELL STRUCTURES

1993 ◽  
Vol 07 (13n14) ◽  
pp. 887-893 ◽  
Author(s):  
K.T. TSEN ◽  
C. CHIA ◽  
J. WEST ◽  
H. MORKOC
Keyword(s):  
Relaxation Time ◽  
Quantum Well ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Relaxation Times ◽  
Experimental Results ◽  
Multiple Quantum ◽  
Optical Phonons ◽  
Quantum Well Structures ◽  
Population Relaxation

Population relaxation time of confined as well as interface optical phonons in a series of GaAs-AlAs multiple quantum well structures has been measured by picosecond time-resolved Raman spectroscopy. Our experimental results have shown that (1) within the experimental accuracy, the population relaxation time of confined optical phonons in GaAs-AlAs multiple quantum well structures is independent of GaAs well-width and is given by 6±1 ps at T=10 K; (2) the population relaxation times of both GaAs -like and AlAs -like interface optical phonons increase as GaAs well-width increases from 20 Å to 100 Å. These experimental results are compared with theoretical calculations recently carried out by Gupta and Ridley (Ref. 3).

scholarly journals Nonparabolic effects in multiple quantum well structures and influence of external magnetic field on dipole matrix elements

2016 ◽  
Vol 19 (2) ◽  
pp. 39
Author(s):  
Aleksandar Demić ◽  
Jelena Radovanović ◽  
Vitomir Milanović
Keyword(s):  
Magnetic Field ◽  
Matrix Element ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Optical Gain ◽  
Multiple Quantum ◽  
Dipole Matrix Element ◽  
Quantum Well Structures ◽  
Quantum Nanostructures ◽  
Field Influence

We present a method of modeling of nonparabolic effects (NPE) in quantum nanostructures by using second order perturbation theory. We apply this model on multiple quantum well structures and consider the influence of external magneticfield on dipole matrix element which is usually considered constant. The dipole matrix element directly influences the optical gain, and our model can provide a better insight to how NPE and magnetic field influence the gain of quantum nanostructures.

Photoluminescence ofCd1−xMnxTe-CdTe multiple-quantum-well structures and superlattices in a magnetic field

1985 ◽  
Vol 32 (12) ◽  
pp. 8116-8125 ◽  
Author(s):  
J. Warnock ◽  
A. Petrou ◽  
R. N. Bicknell ◽  
N. C. Giles-Taylor ◽  
D. K. Blanks ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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