Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications

2002 ◽  
Vol 91 (9) ◽  
pp. 6173-6180 ◽  
Author(s):  
D. Niu ◽  
R. W. Ashcraft ◽  
M. J. Kelly ◽  
J. J. Chambers ◽  
T. M. Klein ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
High K ◽  
Physical And Chemical ◽  
Reaction Schemes

Search for New High-κ Dielectrics by Combinatorial Chemical Vapor Deposition

2003 ◽  
Vol 765 ◽  
Author(s):  
Bin Xia ◽  
Ryan Smith ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxides ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Film Composition ◽  
Metal Nitrates ◽  
Ternary Metal ◽  
The Given

AbstractTo develop a high-κ gate dielectric for replacing SiO2 in MOSFETs, multi-component metal oxides could have advantages over single metal oxides because they may offer higher dielectric constants (κ's) as well as other favorable properties. To find the film composition for obtaining a good dielectric from the given component oxides is a time-consuming and costly process for multi-component systems. Recently, we reported a combinatorial chemical vapor deposition (CVD) technique to deposit compositional spreads of ternary metal-oxides for high-κ dielectrics. In this work, compositional spreads of ZrO2, TiO2, SnO2 and HfO2 were deposited using anhydrous metal nitrates. By measuring chemical composition, film thickness, and electrical properties, we are able to map κ and establish its dependence on film composition. This high-throughput deposition technique allows us to generate a compositional library quickly for screening material properties. In addition, a crystalline phase which does not exist in any of the four pure oxides, α-PbO2, was detected.

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