Interfacial and electrical properties of Zr[sub x]Ti[sub 1−x]O[sub 4] (x=0.66) films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high-k gate dielectric

2008 ◽  
Vol 26 (4) ◽  
pp. 1338 ◽  
Author(s):  
B. S. Sahu ◽  
S. V. N. Pammi ◽  
Nak-Jin Seong ◽  
Soon-Gil Yoon
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High K ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
High K Gate Dielectric

Ohmic contact to GaN grown by MOCVD

1997 ◽  
Vol 482 ◽  
Author(s):  
Dae-Woo Kim ◽  
Hong Koo Baik ◽  
Cha Yeon Kim ◽  
Sung Woo Kim ◽  
Chang Hee Hong
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
Specific Contact Resistance ◽  
Organic Chemical ◽  
Specific Contact ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe investigated the electrical properties and interfacial reactions of the Si/Ti based ohmic contacts to n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. The perfect ohmic characteristics were obtained after annealing at 700 °C for 3 min under N2 ambient, and Ti silicide was formed in Ti-Si based contact systems. The lowest value for the specific contact resistance of 3.86×10-6 Ωcm2 was obtained for Au(1000 Å)/Ni(400 Å)/Ti(400 Å)/Si(1460 Å)/Ti(150 Å) after annealing at 900 °C for 3min. It could be concluded from the material analyses that the ohmic characteristics of Ti-Si based contact systems were due to the low barrier height by the formation of Ti silicides with a low work function

Preparation and Electrical Properties ofSrTiO3Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)

1996 ◽  
Vol 35 (Part 1, No. 9B) ◽  
pp. 4890-4895 ◽  
Author(s):  
Chang Seok Kang ◽  
Cheol Seong Hwang ◽  
Hag-Ju Cho ◽  
Byoung Taek Lee ◽  
Soon Oh Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Liquid Source ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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