Air-gap capacitance cell for the investigation of porous or solvent containing dielectric films

2002 ◽  
Vol 73 (4) ◽  
pp. 1845-1852 ◽  
Author(s):  
Reinhard Schwödiauer ◽  
Siegfried Bauer
Keyword(s):  
Air Gap ◽  
Dielectric Films ◽  
Capacitance Cell

Electron microscopy studies of PZT ferroelectric film capacitor structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1364-1365
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  
Keyword(s):  
Electric Fields ◽  
Sol Gel ◽  
Ferroelectric Material ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Lead Zirconium Titanate ◽  
Si Substrate ◽  
Film Capacitor ◽  
Pzt Films ◽  
High Dielectric

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

A novel analytical calculation of magnetic field in the slotted air gap of spoke-type permanent-magnet machines using conformal mapping

2020 ◽  
pp. 1-15
Author(s):  
Jianqi Li ◽  
Yu Zhou ◽  
Jianying Li
Keyword(s):  
Magnetic Field ◽  
Conformal Mapping ◽  
Permanent Magnet ◽  
Flux Density ◽  
Analytical Method ◽  
Electromotive Force ◽  
Analytical Calculation ◽  
Air Gap ◽  
Permanent Magnet Machines ◽  
Peak Value

This paper presented a novel analytical method for calculating magnetic field in the slotted air gap of spoke-type permanent-magnet machines using conformal mapping. Firstly, flux density without slots and complex relative air-gap permeance of slotted air gap are derived from conformal transformation separately. Secondly, they are combined in order to obtain normalized flux density taking account into the slots effect. The finite element (FE) results confirmed the validity of the analytical method for predicting magnetic field and back electromotive force (BEMF) in the slotted air gap of spoke-type permanent-magnet machines. In comparison with FE result, the analytical solution yields higher peak value of cogging torque.

Effects of contact gap on nondestructive evaluation using magnetic measurement for ferromagnetic steel

2020 ◽  
Vol 64 (1-4) ◽  
pp. 969-975
Author(s):  
Hiroaki Kikuchi ◽  
Yuki Sato
Keyword(s):  
Magnetic Flux ◽  
Nondestructive Evaluation ◽  
Effective Permeability ◽  
Magnetic Circuit ◽  
Magnetic Measurement ◽  
Air Gap ◽  
Motive Force ◽  
Hysteresis Curve ◽  
Evaluation Technique ◽  
Ferromagnetic Steel

We investigated effects of contact gap on magnetic nondestructive evaluation technique using a magnetic single-yoke probe. Firstly, we evaluated hysteresis curves and impedance related to permeability of the material measured by a single-yoke probe, when an air gap length between the probe and specimens changes. The hysteresis curve gradually inclines to the axis of the magneto-motive force and magneto-motive force at which the magnetic flux is 0 decreases with increasing the gap length. The effective permeability also decreases with increasing the gap thickness. The incremental of gap thickness increases the reluctance inside the magnetic circuit composed of the yoke, specimen and gap, which results in the reduction of flux applying to specimen.

Design and Analysis of Air Gap Microstrip Slot Antenna Using Aperture Coupling

2012 ◽  
Vol 2 (4) ◽  
pp. 104-106
Author(s):  
J. P. Ganji J. P. Ganji ◽  
◽  
M.C.Sahoo M.C.Sahoo ◽  
J.M.Rathod J.M.Rathod
Keyword(s):  
Air Gap ◽  
Slot Antenna ◽  
Aperture Coupling

Development of the Partial Discharge Inception Calculation Model in a Non-uniform Air Gap Considering the Effect of Humidity

2011 ◽  
Vol 131 (12) ◽  
pp. 1017-1023 ◽  
Author(s):  
Norihito Yanagita ◽  
Tatsuro Kato ◽  
Toshiaki Rokunohe ◽  
Takeshi Iwata ◽  
Hiroki Kojima ◽  
...  
Keyword(s):  
Partial Discharge ◽  
Calculation Model ◽  
Air Gap

Design of the Air Gap Distribution of an Inductor for Automobiles with CI-Type Core

2016 ◽  
Vol 136 (11) ◽  
pp. 901-906
Author(s):  
Akinari Yamashita ◽  
Mamiko Inamori ◽  
Masayuki Morimoto
Keyword(s):  
Air Gap

Modeling of Air-gap Flux Inside of Generator for Fault Location

2012 ◽  
Vol 132 (10) ◽  
pp. 872-878
Author(s):  
Junya Matsuki ◽  
Hisao Taoka ◽  
Shoji Kawasaki ◽  
Yuki Nakajima ◽  
Masakazu Horime ◽  
...  
Keyword(s):  
Fault Location ◽  
Air Gap

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

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