Explanation for the temperature dependence of the gate current in metal-oxide-semiconductor transistors

2002 ◽  
Vol 80 (11) ◽  
pp. 1939-1941 ◽  
Author(s):  
Andrea Ghetti
Keyword(s):  
Metal Oxide ◽  
Temperature Dependence ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Current

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

2013 ◽  
Vol 103 (12) ◽  
pp. 123511 ◽  
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Takafumi Kamimura ◽  
Man Hoi Wong ◽  
Daivasigamani Krishnamurthy ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

2015 ◽  
Vol 107 (5) ◽  
pp. 053504 ◽  
Author(s):  
Abhitosh Vais ◽  
Han-Chung Lin ◽  
Chunmeng Dou ◽  
Koen Martens ◽  
Tsvetan Ivanov ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Temperature Dependence ◽  
Frequency Dispersion ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Emission Process
Sign in / Sign up

Export Citation Format

Share Document