Effect of N2O plasma treatment on the stabilization of water absorption in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition

2002 ◽  
Vol 80 (10) ◽  
pp. 1728-1730 ◽  
Author(s):  
S. P. Kim ◽  
S. K. Choi ◽  
Youngsoo Park ◽  
Ilsub Chung
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Water Absorption ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Fluorinated Silicon Oxide ◽  
Resonance Plasma

Composition dependence of room temperature 1.54μm Er3+ luminescence from erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

1997 ◽  
Vol 486 ◽  
Author(s):  
Jung H. Shin ◽  
Mun-Jun Kim ◽  
Se-Young Seo ◽  
Choochon Lee
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Composition Dependence ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Erbium Doped ◽  
Resonance Plasma

AbstractThe composition dependence of room temperature 1.54 μ Er3+ photoluminescence of erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with Si:O ratio of 1:1.2 after 900 °C anneal and formation of silicon nanoclusters embedded in SiO2 matrix. High active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence.

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