Magnetotransport properties of a room temperature rectifying tunnel junction made of electron and hole doped manganites

2002 ◽  
Vol 91 (10) ◽  
pp. 7715 ◽  
Author(s):  
C. Mitra ◽  
G. Köbernik ◽  
K. Dörr ◽  
K.-H. Müller ◽  
L. Schultz ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Doped Manganites

Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction

2016 ◽  
Vol 4 (37) ◽  
pp. 8711-8715 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Salma Siddique ◽  
Ghulam Hussain ◽  
Muhammad Waqas Iqbal
Keyword(s):  
Boron Nitride ◽  
Tunnel Junction ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Valve Effect ◽  
First Time

Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.

Room-temperature side-gate-induced current modulation in a magnetic tunnel junction with an oxide-semiconductor barrier for vertical spin MOSFET operation

2019 ◽  
Vol 12 (2) ◽  
pp. 023009 ◽  
Author(s):  
Toshiki Kanaki ◽  
Shin Matsumoto ◽  
Sai Krishna Narayananellore ◽  
Hidekazu Saito ◽  
Yoshihiro Iwasa ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Current Modulation ◽  
Temperature Side

scholarly journals Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature

2022 ◽  
Author(s):  
Sai Li ◽  
Ao Du ◽  
Yadong Wang ◽  
Xinran Wang ◽  
Xueying Zhang ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction ◽  
Experimental Demonstration

Research on Thermal Properties of Insulator-Metal Transition at Room Temperature in Sm1-xCaxMnO3

2019 ◽  
Author(s):  
Ruxia Chang ◽  
Desong Fan ◽  
Qiang Li
Keyword(s):  
Room Temperature ◽  
Bulk Material ◽  
Laser Flash ◽  
Solid State Reaction Method ◽  
Flash Method ◽  
X Ray Diffraction ◽  
Insulator Metal Transition ◽  
Wire Method ◽  
Metal State ◽  
Doped Manganites

Abstract The high-purity electron-doped manganites Sm1-xCaxMnO3 nanopowder were prepared by the solid-state reaction method, then the bulk material were obtained through granulation, molding, calcining, grinding and polishing. SCMO nanoparticles with 200 nm were obtained by the sol-gal process. The phase and surface morphology of these materials were characterized by X-ray diffraction and Scanning electron microscope and other experiments. The variable resistivity of the bulk materials were measured by two-wire method in the temperature range of 100–420K. The thermal conductivity was measured by the Laser Flash method. The results show that different doping ratios can change the phase transition temperature of the metal-insulation state. The temperature changed from 0 to 50 °C. The TMI could be regulated to room temperature. When the temperature is high than the TMI, it performs as metal state, on the contrary, it performs as an insulating state.

scholarly journals A magnetic tunnel junction with an L21-ordered Co2FeSi electrode formed by all room-temperature fabrication processes

2014 ◽  
Vol 557 ◽  
pp. 386-389 ◽  
Author(s):  
Yuichi Fujita ◽  
Shinya Yamada ◽  
Yuya Maeda ◽  
Masanobu Miyao ◽  
Kohei Hamaya
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Magnetic Tunnel Junction

scholarly journals Room temperature conductance switching in a molecular iron(iii) spin crossover junction

2021 ◽  
Author(s):  
Senthil Kumar Karuppannan ◽  
Alejandro Martín-Rodríguez ◽  
Eliseo Ruiz ◽  
Phimphaka Harding ◽  
David J. Harding ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Room Temperature ◽  
Spin Crossover ◽  
Conductance Switching ◽  
Molecular Spin

Herein, we report the first room temperature switchable Fe(iii) molecular spin crossover (SCO) tunnel junction.

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