A silicon carbide pressure sensor for harsh environment

2002 ◽  
Author(s):  
Qamar A. Shams ◽  
Seun Kahng ◽  
Michael Mitchell ◽  
Theodore Kuhn
Keyword(s):  
Silicon Carbide ◽  
Pressure Sensor ◽  
Harsh Environment

Fabrication of SiC MEMS Pressure Sensor by Anodic Bonding

2008 ◽  
Author(s):  
Wei Tang ◽  
Zhe Chen ◽  
Dayu Tian ◽  
Haixia Zhang
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Chemical Stability ◽  
Pressure Sensor ◽  
Anodic Bonding ◽  
Harsh Environment ◽  
Cmos Process ◽  
Surface Micromachining

Due to its outstanding chemical stability and mechanical properties, silicon carbide (SiC) is one of the best materials for harsh environment applications. In this work, bulk micromachining technique was utilized to fabricate a PECVD SiC pressure sensor. This technique simplified the process and solved the stickiness problem in surface micromachining. The whole fabrication temperature is under 450°C, which makes it compatible with the CMOS process.

Wireless LTCC-based capacitive pressure sensor for harsh environment

2013 ◽  
Vol 197 ◽  
pp. 30-37 ◽  
Author(s):  
Jijun Xiong ◽  
Ying Li ◽  
Yingping Hong ◽  
Binzhen Zhang ◽  
Tianhong Cui ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Harsh Environment ◽  
Capacitive Pressure Sensor

scholarly journals 09 - Silicon Carbide Sensor Systems for Harsh Environment Market Applications

2015 ◽  
Author(s):  
M. Andersson ◽  
B. Hammarlund ◽  
A. Lloyd Spetz ◽  
D. Puglisi
Keyword(s):  
Silicon Carbide ◽  
Harsh Environment ◽  
Sensor Systems

A Piezoresistive Low-Pressure Sensor Fabricated Using Silicon-on-Insulator (SOI) for Harsh Environment Applications

2001 ◽  
pp. 482-485 ◽  
Author(s):  
Jochen von Berg ◽  
Marco Gnielka ◽  
Claudio Cavalloni ◽  
Thomas Boltshauser ◽  
Thomas Diepold ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Low Pressure ◽  
Silicon On Insulator ◽  
Harsh Environment

Sensitivity Optimization of MEMS Based Piezoresistive Pressure Sensor for Harsh Environment

Silicon ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 2663-2671 ◽  
Author(s):  
Priyanshu Verma ◽  
Deepak Punetha ◽  
Saurabh Kumar Pandey
Keyword(s):  
Pressure Sensor ◽  
Harsh Environment ◽  
Piezoresistive Pressure Sensor

Study of High-Temperature MEMS Pressure Sensor Based on SiC-AlN Structure

2013 ◽  
Vol 562-565 ◽  
pp. 471-476 ◽  
Author(s):  
Hao Jie Lv ◽  
Tao Geng ◽  
Guo Qing Hu
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Sandwich Structure ◽  
High Sensitivity ◽  
High Accuracy ◽  
External Pressure ◽  
Harsh Environment ◽  
Capacitive Pressure Sensor ◽  
Technical Process ◽  
Higher Temperature

In the paper, a touch mode capacitive pressure sensor with double-notches structure is presented. The sensor employs a special SiC-AlN-SiC sandwich structure to achieve high-accuracy pressure measurement in hash environment such as high-temperature. The analysis to the relation of capacitance and external pressure of the sensor shows that the sensor has high sensitivity and long linear range simultaneously. In addition, the technical process of the sensor has been designed in detail in the paper. The research shows that the sensor packaged in a high-temperature ceramic AlN can withstand higher temperature. Consequently, the sensor can be applied in high-temperature and harsh environment.

Novel vs Conventional Bipolar Logic Circuit Topologies in 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 1103-1106 ◽  
Author(s):  
Hazem Elgabra ◽  
Amna Siddiqui ◽  
Shakti Singh
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Integrated Circuits ◽  
Logic Circuit ◽  
Digital Logic ◽  
Harsh Environment ◽  
The Novel ◽  
Attractive Candidate ◽  
Silicon Based

Silicon Carbide (SiC) is an attractive candidate for integrated circuits (ICs) in harsh environment applications due to its superior inherent electrical properties. Though current research is geared towards adapting existing silicon based digital logic technologies to 4H-SiC, the true merit of each technology in 4H-SiC has remained unclear. Creating logic technologies specifically for 4H-SiC, taking into account its electrical properties, is an area which remains unexplored. In this paper, we present a novel bipolar logic technology that is designed and optimized for 4H-SiC, and compare its performance with the prevalent bipolar technologies. The results show that the novel logic technology not only compares well with the conventional technologies in performance, but also features simpler design, smaller footprint, and a low transistor count.

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