Absorption edge determination of thick GaAs wafers using surface photovoltage spectroscopy

2002 ◽  
Vol 73 (4) ◽  
pp. 1835-1840 ◽  
Author(s):  
T. K. Sharma ◽  
S. Porwal ◽  
R. Kumar ◽  
Shailendra Kumar
Keyword(s):  
Absorption Edge ◽  
Surface Photovoltage ◽  
Surface Photovoltage Spectroscopy

Determination of the Interface States in Amorphous/Crystalline Silicon Using Surface Photovoltage Spectroscopy

2013 ◽  
Vol 34 (9) ◽  
pp. 1079-1081
Author(s):  
Hao Li ◽  
Xiangbo Zeng ◽  
Ping Yang ◽  
Xiaodong Zhang ◽  
Xiaobing Xie ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Interface States ◽  
Surface Photovoltage ◽  
Surface Photovoltage Spectroscopy

Application of Surface Photovoltage Spectroscopy in Surface Analysis

1992 ◽  
Vol 261 ◽  
Author(s):  
Iain D. Baikie ◽  
Eimert Venderbosch ◽  
Birgitta Hall
Keyword(s):  
Work Function ◽  
Surface Analysis ◽  
Electron Affinity ◽  
Surface Photovoltage ◽  
Semiconductor Surface ◽  
Temperature Dependent ◽  
Band Bending ◽  
Surface Photovoltage Spectroscopy ◽  
Wide Range

ABSTRACTExtension of the Kelvin probe vibrating capacitor technique of measuring work function, via Illumination of the semiconductor surface, i.e., Surface Photovoltage Spectroscopy (SPS), has many potential applications in the field of surface analysis.The combination of broad-band (white) and monochromatic radiation, together with measurement of the dark signal permits complete characterisation of the semiconductor work function via determination of the electron-affinity, surface potential and Local DensIty-of-States (LDOS). The work function is an extremely sensitive indicator of a wide range of surface processes, e.g., particle adsorption, stress, defect creation, phase-transitions, etc.We Illustrate application of this technique in the study of the temperature dependent initial oxidation behaviour of p-type Si(111) 7×7 between 100 and 300 K. The SPV response of the clean surface at 100 K corresponds to the capture of photo-stimulated electrons by a band of surface states centered around 1.4, 1.7, 1.9 and 2.4 eV. This response completely disappears at the peak of the (dark) work function change (0.3L) corresponding to a near complete removal of dangling bond states. The temperature-dependent white-light SPS response permits determination of the band-bending throughout the adsorption process. We observe that at 100 K the band-bending substantially decreases during the initial adsorption phase (0.1 L), after this dose it remains constant. However at 300 K the band-bending decreases much later, i.e., >10 L, in conjunction with oxygen permeation through the surface layer.In conclusion Surface Photovoltage Spectroscopy SPS is a simple and flexible method which can be used to follow the rather complex changes occurring at the semiconductor surface. It is a non-contact, nondestructive technique which allows simultaneous determination of both semiconductor band-bending and electron affinity.

Determination of undoped CdTe(111) surface polarity by surface photovoltage spectroscopy

1994 ◽  
Vol 74 (2) ◽  
pp. 201-206 ◽  
Author(s):  
L. Burstein ◽  
Yoram Shapira ◽  
E. Moons ◽  
David Cahen
Keyword(s):  
Surface Photovoltage ◽  
Surface Polarity ◽  
Surface Photovoltage Spectroscopy

Band gap determination of semiconductor powders via surface photovoltage spectroscopy

1999 ◽  
Vol 86 (10) ◽  
pp. 5573-5577 ◽  
Author(s):  
D. Gal ◽  
Y. Mastai ◽  
G. Hodes ◽  
L. Kronik
Keyword(s):  
Band Gap ◽  
Surface Photovoltage ◽  
Surface Photovoltage Spectroscopy

Nondestructive, Room Temperature Determination Of The Nature Of The Band-Bending (Carrier Type) In Group III Nitrides Using Contactless Electroreflectance And Surface Photovoltage Spectroscopy

1997 ◽  
Vol 482 ◽  
Author(s):  
Wojciech Krystek ◽  
Fred H. Pollak ◽  
Z. C. Feng ◽  
M. Schurman ◽  
R. A. Stall
Keyword(s):  
Room Temperature ◽  
Group Iii Nitrides ◽  
Surface Photovoltage ◽  
Band Bending ◽  
Group Iii ◽  
Temperature Determination ◽  
Surface Photovoltage Spectroscopy ◽  
Type Character

AbstractUsing contactless electroreflectance and surface photovoltage spectroscopy at room temperature we have nondestructively evaluated the band bending (carrier type) at the surface of epitaxial n- and p-type GaN/sapphire samples as well as at both the InGaN surface and the GaN at the InGaN/GaN interface of samples of epitaxial InGaN grown on top of thick GaN epilayers/sapphire, having average n- and p-type character.

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