Direct determination of the band‐gap states in hydrogenated amorphous silicon using surface photovoltage spectroscopy

1995 ◽  
Vol 67 (3) ◽  
pp. 371-373 ◽  
Author(s):  
E. Fefer ◽  
Y. Shapira ◽  
I. Balberg
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Direct Determination ◽  
Surface Photovoltage ◽  
Surface Photovoltage Spectroscopy ◽  
Gap States ◽  
Hydrogenated Amorphous

Fabrication of narrow-band-gap hydrogenated amorphous silicon by chemical annealing

1998 ◽  
Vol 84 (3) ◽  
pp. 1333-1339 ◽  
Author(s):  
Wataru Futako ◽  
Shinya Takeoka ◽  
Charles M. Fortmann ◽  
Isamu Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Annealing ◽  
Hydrogenated Amorphous

Determination of the Mobile-Hydrogen Charge State in Hydrogenated Amorphous Silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
Brent P. Nelsona ◽  
Yueqin Xu ◽  
Robert C. Reedy ◽  
Richard S. Crandall ◽  
A. Harv Mahan ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Electric Fields ◽  
Correlation Energy ◽  
Hydrogen Charge ◽  
Hydrogenated Amorphous Silicon ◽  
Mobile Hydrogen ◽  
Almost All ◽  
Hydrogenated Amorphous ◽  
Best Fit

ABSTRACTWe find that hydrogen diffuses as H+, H0, or H- in hydrogenated amorphous silicon depending on its location within the i-layer of a p-i-n device. We annealed a set of five p-i-n devices, each with a thin deuterium-doped layer at a different location in the i-layer, and observed the D-diffusion using secondary ionmass spectrometry (SIMS). When H-diffuses in a charged state, electric fields in the device strongly influence the direction and distance of diffusion. When D is incorporated into a device near the p-layer, almost all of the D-diffusion occurs as D+, and when the D is incorporated near the n-layer, most of the D-diffusion occurs as D-. We correlate the preferential direction of D-motion at given depth within the i-layer, with the local Fermi level (as calculated by solar cell simulations), to empirically determine an effective correlation energy for mobile-H electronic transitions of 0.39 ± 0.1 eV. Using this procedure, the best fit to the data produces a disorder broadening of the transition levels of ∼0.25 eV. The midpoint between the H0/+ and the H0/- transition levels is ∼0.20 ± 0.05 eV above midgap.

scholarly journals Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 402 ◽  
Author(s):  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Ming Jie Zhao ◽  
Hai-Jun Lin ◽  
Wen-Zhang Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Flow Rate ◽  
Computer Aided Design ◽  
Hydrogenated Amorphous Silicon ◽  
Wavelength Region ◽  
Window Layer ◽  
Solar Cell Performance ◽  
Hydrogenated Amorphous

Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

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