Unconventional critical behavior of magnetic susceptibility as a consequence of phase separation and cluster formation in La[sub 0.7]Ca[sub 0.3]MnO[sub 3] thin films

2002 ◽  
Vol 91 (10) ◽  
pp. 7944 ◽  
Author(s):  
H. Huhtinen ◽  
R. Laiho ◽  
E. Lähderanta ◽  
J. Salminen ◽  
K. G. Lisunov ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Susceptibility ◽  
Phase Separation ◽  
Critical Behavior ◽  
Cluster Formation

Oxygen off-stoichiometry and phase separation in EuO thin films

2011 ◽  
Vol 84 (15) ◽  
Author(s):  
S. G. Altendorf ◽  
A. Efimenko ◽  
V. Oliana ◽  
H. Kierspel ◽  
A. D. Rata ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Separation

Phase Separation and Molecular Intermixing in Polymer–Fullerene Bulk Heterojunction Thin Films

2012 ◽  
Vol 3 (6) ◽  
pp. 683-688 ◽  
Author(s):  
Matthias A. Ruderer ◽  
Robert Meier ◽  
Lionel Porcar ◽  
Robert Cubitt ◽  
Peter Müller-Buschbaum
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Bulk Heterojunction

Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Phase Separation ◽  
Nanocrystalline Film ◽  
Post Deposition Annealing ◽  
Current Increase ◽  
Sputtering Deposition ◽  
Thermal And Electrical Properties ◽  
Sputter Deposited ◽  
Post Deposition

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.

Fast vortex motion and filamentary phase separation in YBCO and TlBCCO thin films

2000 ◽  
Vol 332 (1-4) ◽  
pp. 207-213 ◽  
Author(s):  
J. Jung ◽  
H. Yan ◽  
H. Darhmaoui ◽  
W.K. Kwok
Keyword(s):  
Thin Films ◽  
Phase Separation ◽  
Vortex Motion

Magnetic susceptibility of alkali n -butyrates and isovalerates near their melting points

1975 ◽  
Vol 342 (1628) ◽  
pp. 39-49 ◽  
Keyword(s):  
Magnetic Susceptibility ◽  
Molten Salts ◽  
Diamagnetic Susceptibility ◽  
Cluster Formation ◽  
Anion Binding ◽  
Melting Transition ◽  
Melting Points ◽  
Clearing Point ◽  
Precursor Effects ◽  
Transition Behaviour

Various physical properties of alkali carboxylates can be used to study precursor effects immediately below or above their melting points. The present paper describes unusual pre-transition behaviour observed in the magnetic susceptibility of molten n -butyrates and isovalerates. This takes the form of a transitory enhancement of diamagnetic susceptibility, by nearly 10% in some cases, when the isotropic melt is cooled through the clearing point and into the mesophase region while a magnetic field (up to 1 T(10 4 G)) is applied. No corresponding changes are observed on taking the salt through the same temperature range but in the inverse direction. Again, no corresponding change is observed with an alkali carboxylate which shows no mesophase melting transition. Present findings can be accounted for on the assumption of cluster formation in the molten salts as these approach their upper melting points, which is also indicated by other evidence. The (transient) enhancement of molecular diamagnetism in this region of temperature may also indicate transient perturbations in the actual cation-anion binding near the transition temperature.

The Onset of Connectivity

2020 ◽  
pp. 15-18
Author(s):  
Helmut Satz
Keyword(s):  
Electrical Conductivity ◽  
Galaxy Formation ◽  
Critical Behavior ◽  
Cluster Formation ◽  
Abrupt Onset ◽  
Geometric Form

Placing identical finite sized objects randomly in a plane leads first to cluster formation, eventually to the formation of overall connection: this process is denoted as percolation. It is a geometric form of critical behavior, occurring with an abrupt onset. Such phenomena form the basis of many transitions, from Galaxy formation to the onset of electrical conductivity. The formation of locust swarms can be considered as such a process.

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