In situ observation of nickel metal-induced lateral crystallization of amorphous silicon thin films

2002 ◽  
Vol 80 (6) ◽  
pp. 944-946 ◽  
Author(s):  
Mitsutoshi Miyasaka ◽  
Kenji Makihira ◽  
Tanemasa Asano ◽  
Efstathios Polychroniadis ◽  
John Stoemenos
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
In Situ Observation ◽  
Nickel Metal ◽  
Silicon Thin Films ◽  
Lateral Crystallization

A Study on the Metal Induced Lateral Crystallization Behavior of Amorphous Silicon Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
Byung-Il Lee ◽  
Kwang-Ho Kim ◽  
Won-Cheol Jeong ◽  
Pyung-Su Ahn ◽  
Jin-Wook Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Crystallization Behavior ◽  
Crystallization Rate ◽  
External Stress ◽  
Tem Analysis ◽  
Silicon Thin Films ◽  
Amorphous Si ◽  
Lateral Crystallization ◽  
Si Films

AbstractBasic mechanisms for both Ni- and Pd-metal induced lateral crystallization (MILC) are investigated. For both cases, tiny silicides were formed under the metal deposited area, and propagated toward amorphous Si films leaving crystallized Si behind at temperatures as low as 500 °C. Ni-MILC was influenced by Pd such that the lateral crystallization rate was enhanced, and the temperature for the lateral crystallization was lowered to 450 °C. Through TEM analysis and external stress experiments, it was found that the enhancement of the lateral crystallization rate was closely related to the compressive stress generated by the formation of nearby Pd2Si.

In Situ Fast Temperature Measurement of Silicon Thin Films during the Excimer Laser Annealing

2006 ◽  
Vol 326-328 ◽  
pp. 195-198
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Melting Point ◽  
Temperature Measurement ◽  
Amorphous Silicon ◽  
Laser Annealing ◽  
Crystalline Silicon ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

The formation and growth mechanism of polysilicon grains in thin films via laser annealing of amorphous silicon thin films are studied. The complete understanding of the mechanism is crucial to improve the thin film transistors used as switches in the active matrix liquid crystal displays. To understand the recrystallization mechanism, the temperature history and liquidsolid interface motion during the excimer laser annealing of 50-nm thick amorphous and polysilicon films on fused quartz substrates are intensively investigated via in-situ time-resolved thermal emission measurements, optical reflectance and transmittance measurements at near infrared wavelengths. The front transmissivity and reflectivity are measured to obtain the emissivity at the 1.52 μm wavelength of the probe IRHeNe laser to improve the accuracy of the temperature measurement. The melting point of amorphous silicon is higher than that of crystalline silicon of 1685 K by 100-150 K. This is the first direct measurement of the melting temperature of amorphous silicon thin films. It is found that melting of polysilicon occurs close to the melting point of crystalline silicon. Also the optical properties such as reflectance and transmittance are used to determine the melt duration by the detecting the difference of the optical properties of liquid silicon and solid silicon.

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